TY  - JOUR
T1  - CVD VE PECVD TEKNİĞİ KULLANILARAK BAKIR FOLYOLAR ÜZERİNDE GRAFEN NANOYAPILARIN ELDE EDİLMESİ VE KARAKTERİZASYONU
TT  - FABRICATION AND CHARACTERIZATION OF GRAPHENE NANOSTRUCTURE ON COPPER FOILS USING CVD AND PECVD TECHNIQUE
AU  - Bayram, Özkan
AU  - İğman, Erdal
AU  - Şimşek, Önder
PY  - 2019
DA  - July
Y2  - 2019
DO  - 10.28948/ngumuh.598128
JF  - Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi
JO  - NÖHÜ Müh. Bilim. Derg.
PB  - Niğde Ömer Halisdemir Üniversitesi
WT  - DergiPark
SN  - 2564-6605
SP  - 1126
EP  - 1134
VL  - 8
IS  - 2
LA  - tr
AB  - Buçalışmada, CH4 gazı kullanılarak bakır folyolar üzerinde grafen incefilmlerin sentezlenmesi amaçlanmıştır. İnce filmlerin elde edilebilmesi içinplazma destekli kimyasal buhar biriktirme (PECVD) ve kimyasal buhar biriktirme(CVD) yöntemi kullanılmıştır. Bakır alt-taşlar, standart ön temizlikyapıldıktan sonra kuvars camdan yapılmış reaktöre yerleştirilmiştir. Vakumodasının taban basıncı 5-10 mTorr’a düşürüldükten ve hidrojen gazı ile tavlamaişlemi yapıldıktan sonra, CH4 gazı ortama gaz akış kontrol ünitesi yardımıylagönderilmiştir. PECVD sisteminde; RF güç kaynağı (13,56 MHz), kontrol ünitesivasıtasıyla aktif hale getirilerek, üretilen enerji ortama gönderilmiştir. İşlembasıncı 100 mTorr, sıcaklık 600 ˚C, RF gücü 50 W ve kaplama süresi ise20 dakika olarak ayarlanmıştır. CVD tekniğinde ise, RF gücü ortadan kaldırılmışve büyütme sıcaklığı 1000 ˚C olarak belirlenmiştir. Elde edilen Grafennanoyapıların karakterizasyonu için Raman, SEM ve TEM analizlerigerçekleştirilmiştir. Raman sonuçlarına göre, CVD yöntemiyle elde edilenyapılar, tek tabaka grafen yapısını doğrulamıştır. Bununla beraber PECVDtekniği ile tek tabaka grafen nanoyapılardan ziyade çok tabakalı yapı eldeedildi.
KW  - PECVD
KW  - CVD
KW  - Grafen
KW  - İnce Film
N2  - In this study, it was aimedto synthesize graphene thin films on copper foils using CH4 gas.Plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition(CVD) method were used to obtain thin films. Copper foils were placed in quartzreactor chamber after standard pre-cleaning. Then, the base pressure of thevacuum chamber was lowered to 5-10 mTorr. The foils was annealed with hydrogengas and CH4 gas was sent to the chamber by means of gas flowcontroller. In PECVD system; RF powersupply (13.56 MHz) was activated by the control unit and the plasma was beformed with generated energy. The deposition pressure was set to 100 mTorr, substrate temperature was 600 ˚C,RF power was 50 W and deposition time was 20 minutes. In the CVD technique, theRF power was eliminated and the deposition temperature was determined as 1000 ˚C.Raman, SEM and TEM analysis were performed for the characterization of theobtained graphene nanostructures. According to the results of Raman, the thinfilm obtained by the CVD method confirmed the single-layer graphene. However,single-layer graphene could not be obtained by PECVD technique.
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UR  - https://doi.org/10.28948/ngumuh.598128
L1  - https://dergipark.org.tr/tr/download/article-file/773086
ER  -