@article{article_769921, title={The Impact of the Different Voltages and Frequencies on Resistivity of the TiO2-based Memristors with 3D Observation in MATLAB}, journal={Avrupa Bilim ve Teknoloji Dergisi}, pages={260–264}, year={2020}, DOI={10.31590/ejosat.769921}, author={Rajabiyoun, Niloufar}, keywords={Memristör, TiO2, 3 Boyutlu Matlab simulatörü}, abstract={Memristor is the fourth fundamental element that was theoretically discovered about 40 years ago by Professor Leon Chua and was introduced alongside three other existing elements (resistor, capacitor and inductor) in the electronic world. Until recently, however, the construction of a physical example of this had not yet taken place. Finally, in 2008, HP introduced a nanometer-sized TiO2 structure with predictable memory behavior and hysteresis. In this paper, after introducing the general characteristics and structure of the memristor, a 3D MATLAB model with nonlinear ion deflection for the titanium dioxide memristor made by HP with current or voltage control capability is presented. By setting the model parameters for the specifications of this memory, some simulations are performed and the results are displayed.}, number={20}, publisher={Osman SAĞDIÇ}