@article{article_791457, title={A high frequency full wave model for nanometric Silicon PIN diode}, journal={Conference Proceedings of Science and Technology}, volume={3}, pages={198–202}, year={2020}, author={Hammour, Sara and Latreche, Saida}, keywords={FTDT, Silicon PIN, Electromagnetic, boundary conditions}, abstract={Abstract|In recent, the eect of electromagnetic radiation on semiconduc-
tor active devices and the coupling eect, which occurs at high frequency be-
tween dierent circuit elements, become more and more important.
This paper presents a high frequency full wave model for Silicon PIN diode.
Ended,we present a three dimensional solutions for the electromagnetic eld
equations (Maxwell’s equations) considering nite dierence time domain (FTDT)
method to describe the circuit passive part. So, we include the electromagnetic
eect by solving Maxwell’s equations while taking into account the interaction
between electromagnetic wave and the active device.
We propose, in this paper, a mathematical method to couple a three-dimension
(3-D) Finite Dierence Time Domain(FDTD) solution of Maxwell’s equations
to the Drift Diusion Model (DDM) concerning the PIN diode. The coupling
between the two models is established by introducing the Maxwell equations in
a relation connecting the current circulating in the diode to the tension on its
terminals.
The active device in the microwave circuits is typically very small in size . Then
it can be modeled by its equivalent lumped device with a very high degree of
accuracy. Thus, in the conventional lumped element-FDTD (LE-FDTD) ap-
proach.
Design and analysis of dynamic resistor of PIN diode coupled with a microstrip
line are presented, the simulation result show that the critical frequency of the
microwave circuit is 20 GHz.}, number={1}, publisher={Murat TOSUN}, organization={Laboratoire Hyper fréquences et Semi-conducteurs (LHS), Département d’électronique, Université Frères Mentouri Constantine, Algerie.}