TY  - JOUR
T1  - Optical Properties of AlInN/AlN HEMTs in Detail
TT  - AlInN/AlN HEMT’in Detaylı Optik Özellikleri
AU  - Akpınar, Ömer
AU  - Bilgili, Ahmet
AU  - Öztürk, Mustafa
AU  - Özçelik, Süleyman
PY  - 2022
DA  - December
DO  - 10.31466/kfbd.954421
JF  - Karadeniz Fen Bilimleri Dergisi
JO  - KFBD
PB  - Giresun Üniversitesi
WT  - DergiPark
SN  - 2564-7377
SP  - 521
EP  - 529
VL  - 12
IS  - 2
LA  - en
AB  - In this study, the optical properties of AlInN/AlN high electron mobility transistor (HEMT) structure, grown on c-oriented sapphire with Metal-Organic Chemical Vapor Deposition (MOCVD) technique, being investigated. Optical characterization is made Kubelka- Munk method. Transmittance, absorbance, and reflectance are investigated in detail. Also, the Kubelka-Munk theory is employed to determine the forbidden energy band gap of InN by using special functions. The energy band gap obtained by this method was compared.
KW  - MOCVD
KW  - HEMT
KW  - AlInN/InN
KW  - Transmittance
KW  - Kubelka-Munk Method
KW  - Mobilite
N2  - Bu çalışmada, Metal Organik Kimyasal Buhar Biriktirme (MOCVD) tekniği ile c-yönelimli safir üzerinde büyütülen AlInN/AlN yüksek elektron hareketli transistör (HEMT) yapısının optik özellikleri incelenmiştir. Optik karakterizasyon Kubelka-Munk yöntemiyle yapılmıştır. Geçirgenlik, absorbans, yansıma detaylı olarak incelenmiştir. Ayrıca özel fonksiyonlar kullanarak InN'nin yasak enerji bant aralığını belirlemek için Kubelka-Munk teorisinden yararlanılmıştır. Bu yöntemle elde edilen enerji bant aralığının karşılaştırılması yapılmıştır.
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UR  - https://doi.org/10.31466/kfbd.954421
L1  - https://dergipark.org.tr/tr/download/article-file/1831841
ER  -