UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE
Abstract
Ga0.87In0.13As0.4Sb0.96
photodiode structure was grown on semi-insulating 4” GaAs substrate by
molecular beam epitaxy. The composition, crystal quality and dislocation
density of epilayers were determined by high resolution X-ray diffraction rocking curve measurements. The threading dislocation density of the
photodetector structure was calculated from the rotational broadening as ~2.5x108
cm-2. The cutoff wavelength and the peak responsivity of the
photodetector were determined as around 2.15 μm and 0.08 A/W at 300 K,
respectively. By applying reverse bias (-100 mV) the responsivity value of the
photodetector increases more than an order (~0.96 A/W) which is the best value
reported up to now. Those results indicate that although there is a large lattice
mismatch (~8.4%) between GaAs substrate and the photodetector structure, an acceptable
photodetector performance was achieved which is important for reducing photodetector
costs.
Keywords
References
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