Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers

Year 2018, Volume: 19 Issue: 1, 24 - 31, 31.03.2018

Serdar Delice

https://doi.org/10.18038/aubtda.332583

Abstract

Thermoluminescence study on nitrogen
doped Tl₂Ga₂S₃Se single crystals was achieved
by performing the experiments with different stopping temperatures of 10−24 K
and various heating rates between 0.4 and 1.2 K/s below room temperature. Thermoluminescence
peak with peak maximum temperature of 54 K was detected from the emitted
luminescence. Two trap levels were obtained from the observed spectra. Curve
fitting and initial rise methods were applied to compute the activation
energies and the values of 34 and 70 meV were found. Thermal cleaning process
was applied to separate the overlapping peaks and so true energy region of
trapping levels was corroborated. Moreover, variation of shape and position of
TL curve were studied by investigating the heating rate behavior of trap
levels. The best known behavior which the peak maximum temperature increases
while the thermoluminescence intensity decreases with raising heating rate was
observed. The effect of the N doping on the existed defects was discussed.

Keywords

Thermoluminescence, defects, N doping

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