Balkan Journal of Electrical and Computer Engineering 2147-284X 2147-284X MUSA YILMAZ 10.17694/bajece.570215 Electrical Engineering Elektrik Mühendisliği Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs https://orcid.org/0000-0001-7482-0536 Yelten Mustafa Berke İSTANBUL TEKNİK ÜNİVERSİTESİ, ELEKTRİK-ELEKTRONİK FAKÜLTESİ, ELEKTRONİK VE HABERLEŞME MÜHENDİSLİĞİ BÖLÜMÜ 07 30 2019 7 3 362 365 05 26 2019 07 05 2019 Copyright © 2013, Balkan Journal of Electrical and Computer Engineering 2013 Balkan Journal of Electrical and Computer Engineering

Cryogenic electronicshas grown in its widespread use for various technological applications.Particularly, CMOS devices and circuits are more frequently used in suchsystems due to their dominance in the electronics industry. At cryogenictemperatures, characteristics of CMOS devices vary, which should becharacterized with measurements. In this paper, the changes in the electronicbehavior of a low threshold voltage (VTH)n-channel MOSFET (nMOSFET) are captured experimentally. The results are thencompared with the measurements of a regular nMOSFET having the same channelwidth and length. It is shown that although the VTH increase of both transistors is at the same amount,this value corresponds to a more significant percentage of the nominalthreshold voltage for the low VTHnMOSFET.

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