A GaN-Based Synchronous Buck Converter for High Power Laser Diode Drive Applications

Öz

Laser Diodes are the essential components for development of high power laser systems. To operate these devices, highly efficient and high power density, compact, current regulated switching converters are necessary. In this paper, Gallium Nitride (GaN) based synchronous buck converters are studied for the application of laser diode driver. For this purpose, two synchronous buck converters one with Si-based the other one with GaN-based are designed, simulated, tested and compared. With the application of GaN-based semiconductors, 96.6% efficiency and 9.1 W/cm³ power density is achieved for 11A, 28V load at 700 kHz operating frequency. 

Anahtar Kelimeler

• High power laser diode,Synchronous buck converter,GaN Transistor,power density,efficiency

Kaynakça

1. [1] D.A.V. Kliner, “nLIGHT alta: A versatile next-generation fiber laser platform for kW materials processing”, in Proc. of the 84th Int. Conf. on Laser Mater. Process., Jan. 2016. pp. 1-7.
2. [2] J. Wallace, “Photonics Products: High-power Fiber Lasers: Kilowatt-level fiber lasers mature”, Laserfocusworld.com, 2018. [Online]. Available: http://www.laserfocusworld.com. [Accessed: 24- Jan- 2018].
3. [3] L. Bao; J. Bai; K. Price; M. Devito; M. Grimshaw; W. Dong; X. Guan; S. Zhang; H. Zhou; K. Bruce; D. Dawson; M. Kanskar; R. Martinsen; J. Haden (2013). “Reliability of high power/brightness diode lasers emitting from 790 nm to 980 nm.” in Proc. of SPIE, Vol. 8605, pp. 86050N-1.
4. [4] J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, J. Rebollo, “A Survey of Wide Bandgap Power Semiconductor Devices,” IEEE Trans. Power Electron., vol. 29, no.5, pp. 2155-2163, May 2014.
5. [5] M. Ishida, T. Ueda, T. Tanaka and D. Ueda, “GaN on Si Technologies for Power Switching Devices,” IEEE Trans. on Electron Devices, vol. 60, no.10, pp.3053-3059, Oct 2013.
6. [6] X. Huang, Z. Liu, Q. Li and F. C. Lee, “Evaluation and Application of 600V GaN HEMT in Cascode Structure,” IEEE Trans. Power Electron., vol. 29 no. 5, pp. 2453-2461, May 2014.
7. [7] M. Kanskar, L. Bao, J. Bai, Z. Chen, D. Dahlen, M. DeVito, W. Dong, M. Grimshaw, J. Haden, X. Guan, M. Hemenway, K. Kennedy, R. Martinsen, J. Tibbals, W. Urbanek, S. Zhang (2014, March). “High reliability of high power and high brightness diode lasers”, in Proc. of SPIE, March 2014, Vol. 8965, pp. 896508.
8. [8] DILAS, “976nm, 90W, conduction-cooled, fiber-coupled diode laser module”, www.dilas.com, 2018 [Online]. Available: http://dilas.com/assets/media/products/DILAS_SE_Module-976nm-90W_HS2-PM10_TD.pdf [Accessed:24-Jan-2018].

9. [9] GaN Systems, “Bottom-side cooled 100V E-mode GaN transistor,” GS61008P datasheet, Rev. 180111.
10. [10] D. Han and B. Sarlioglu, “Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection,” IEEE Trans. Power Electron., vol. 31, no. 1, pp. 601-612, Jan. 2016.
11. [11] Fairchild, Appl. Note AN-6005.
12. [12] Microchip, Appl. Note AN-1471.
13. [13] D. Reusch and J. Styrdom, “Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter,” IEEE Trans. Power Electron., vol.29, no.4, pp.2008-2015, April 2014.