—The use of a solar cell in space requires the knowledge of its behavior under high-energy partial radiation. This radiation in space produces defects in semiconductor that cause a reduction in solar cell power output. In this paper we present the method for predicting the behavior of a solar cell for satellite applications. Modeling has been performed for several types of GaAs and GaInP single cells and results are compared with experimental data obtained for electron and proton irradiations
Birincil Dil | İngilizce |
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Bölüm | Reviews |
Yazarlar | |
Yayımlanma Tarihi | 1 Mart 2014 |
Yayımlandığı Sayı | Yıl 2014 Cilt: 2 Sayı: 1 |
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