EN
Temperature dependent electronic properties of bulk Aluminium system
Abstract
We investigate the possibility of controlling the electronic structure of the bulk aluminium material by given thermal energy to the system. As a bulk material, the structure and optical properties of the aluminium are well known in the literature. Its thermal dependent structural change has also been investigated many times. However, up to the best of our knowledge the relationship between the electronic properties, mechanical structure and some phase transitions of the aluminium due to the thermal energy pumping to the system has not been analyzed in detail. We show that the band structure of aluminium is strongly dependent on the thermal energy obtained by the system and on the phase transitions.
Keywords
References
- Ashcroft N, Sturm K (1971). Interband Absorption and the Optical Properties of Polyvalent Metals. Phys Rev B 3, 1898.
- Cagın T, Dereli G, Uludogan M, Tomak M (1999). Thermal and mechanical properties of some fcc transition metals. Phys Rev B 59, 3468.
- Celik F, Kazanc S, Yildiz A, Ozgen S (2008). Pressure effect on the structural properties of amorphous Ag during isothermal annealing. Intermetallics 16, 793.
- Celik FA (2012). Molecular dynamics simulation of crystallization of amorphous aluminium modelled with EAM. Bitlis Eren Univ J Sci Technol 2, 44-48.
- Cohen MH, Grest GS (1979). Liquid-glass transition, a free-volume approach. Phys Rev B 20, 1077.
- Cohen ML, Bergstresser TK (1966). Band structures and pseudopotential semiconductors of the diamond and zinc-blende structures. Phys Rev 141, 789. for fourteen
- Dakshinamurthy S, Quick N, Kar A (2007). Temperature- dependent optical properties of silicon carbide for wireless temperature sensors. J Phys Appl Phys 40, 353.
- Daw MS, Baskes M (1983). Semiempirical, quantum mechanical calculation of hydrogen embrittlement in metals. Phys Rev Lett 50, 1285.
Details
Primary Language
English
Subjects
-
Journal Section
-
Publication Date
December 23, 2013
Submission Date
October 5, 2013
Acceptance Date
-
Published in Issue
Year 2013 Volume: 3 Number: 2
APA
Köksal, K., Çelik, F. A., & Koç, F. (2013). Temperature dependent electronic properties of bulk Aluminium system. Bitlis Eren University Journal of Science and Technology, 3(2), 39-43. https://doi.org/10.17678/beuscitech.47129
AMA
1.Köksal K, Çelik FA, Koç F. Temperature dependent electronic properties of bulk Aluminium system. Bitlis Eren University Journal of Science and Technology. 2013;3(2):39-43. doi:10.17678/beuscitech.47129
Chicago
Köksal, Koray, Fatih Ahmet Çelik, and Fatih Koç. 2013. “Temperature Dependent Electronic Properties of Bulk Aluminium System”. Bitlis Eren University Journal of Science and Technology 3 (2): 39-43. https://doi.org/10.17678/beuscitech.47129.
EndNote
Köksal K, Çelik FA, Koç F (December 1, 2013) Temperature dependent electronic properties of bulk Aluminium system. Bitlis Eren University Journal of Science and Technology 3 2 39–43.
IEEE
[1]K. Köksal, F. A. Çelik, and F. Koç, “Temperature dependent electronic properties of bulk Aluminium system”, Bitlis Eren University Journal of Science and Technology, vol. 3, no. 2, pp. 39–43, Dec. 2013, doi: 10.17678/beuscitech.47129.
ISNAD
Köksal, Koray - Çelik, Fatih Ahmet - Koç, Fatih. “Temperature Dependent Electronic Properties of Bulk Aluminium System”. Bitlis Eren University Journal of Science and Technology 3/2 (December 1, 2013): 39-43. https://doi.org/10.17678/beuscitech.47129.
JAMA
1.Köksal K, Çelik FA, Koç F. Temperature dependent electronic properties of bulk Aluminium system. Bitlis Eren University Journal of Science and Technology. 2013;3:39–43.
MLA
Köksal, Koray, et al. “Temperature Dependent Electronic Properties of Bulk Aluminium System”. Bitlis Eren University Journal of Science and Technology, vol. 3, no. 2, Dec. 2013, pp. 39-43, doi:10.17678/beuscitech.47129.
Vancouver
1.Koray Köksal, Fatih Ahmet Çelik, Fatih Koç. Temperature dependent electronic properties of bulk Aluminium system. Bitlis Eren University Journal of Science and Technology. 2013 Dec. 1;3(2):39-43. doi:10.17678/beuscitech.47129