Investigation of Structural, Optical and Photovoltaic Properties of Sb2S3 Thin Films
Abstract
Sb2S3 thin films were
prepared on amorphous glass substrates by chemical bath deposition (CBD) at
room temperature. The Sb2S3
thin films were characterized by x-ray diffraction (XRD), Raman spectroscopy,
scanning electron microscopy (SEM) and UV-Vis spectroscopy. The XRD revealed that the as deposited Sb2S3
thin film has a different structure compared to annealed Sb2S3
thin film. As deposited Sb2S3 thin film showed amorphous
structures while the Sb2S3 thin film became
polycrystalline after annealing at 350 0C for 1h under N2. The band gaps of the Sb2S3 thin
films were compared using UV-Vis spectroscopy.
The spectral response of the Sb2S3 thin film
enhanced after the annealing process. The Sb2S3 thin
films were subsequently used to make semiconductor-sensitized TiO2 nanowire
(NW) solar cells. The performances of
the solar cells, with the short circuit current density and open circuit
voltage, were investigated. Based on the optical and photovoltaic measurements,
we consider that annealed Sb2S3 thin films can be
promising materials for developing solar cell technologies.
Keywords
Sb2S3 thin films,chemical bath deposition,semiconductor –sensitized solar cells
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