Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures
Abstract
In this study, second order harmonic generation (SHG) coefficient in asymmetric double delta doped wells (ADQW) were
investigated for a uniform doping distribution model. The electronic properties
of GaAs structure with ADQW, such as the potential profile, sub-band energy
levels, wave functions and charge densities are calculated
by self-consistent the Schrödinger and Poisson equations. According to the parameters used in this study, I have seen that for the doping concentration, SHG peak size in ADQW structure with the
intersubband relaxation time gives the same peak magnitude value with for the
doping concentration 5. Also, for the thickness of the donor
distribution the peak
size value of SHG with has
approximately the same behavior with for the
donor distribution thickness . The dependence on
the structural parameters of the nonlinear transitions in the second order
between the sub-bands is more important for the potential variations of the
photodetectors and optical modulators. These
structures will have an important place in the future research of quantum
photo-electronic devices.
Keywords
References
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