Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Abstract
In this work, MOVPE (Metalorganic Vapor Phase
Epitaxy) growth and characterization studies of high Al content AlGaN epilayers
are reported. We utilize high resolution
X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to
analyze the crystalline quality and
surface morphology of AlGaN epilayers. The role of the growth temperature of
AlGaN epilayers on the structural quality and the surface morphology was
investigated. Growth and measurement results show that single phase AlGaN
epilayers were grown on AlN/Al2O3 template. It is
concluded that the increasing growth temperature increases the Al content of
AlGaN epilayers which enable to control the alloy concentration of AlGaN.
Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth
surface which indicates that the decreasing number of dislocation density.
Keywords
AlGaN,MOVPE,AlN,Al2O3,X-ray diffraction,Atomic force microscope
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