Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration
Abstract
Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined as dependent on Al and In concentration. The energy levels, the wave functions and the finding probability of electron in quantum well (QW) of these systems under effective mass approach were concluded by Schrödinger equation solution. According to our results, the main differences between models A and B are effective mass and energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the energy levels and the potential height of B model are unceasingly higher than of B model. The concentration ratio has a great impact on the electronic features of the asymmetric triple quantum well (ATQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.
Keywords
Asymmetric triple GaAlAs/GaAs quantum well, Asymmetric triple GaInAs/GaAs quantum well, Concentration ratio, Electronic characteristics
Project Number
M-679
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