Characteristic of gap photodectored plasma cell
Abstract
In the study, it was experimentally investigated the Microelectronic Gas Discharge System (MGDS) with Gallium Phosphate (GaP) cathode. The system was operated in the dark and under different Infrared (IR) illumination intensities. The Current-Voltage Characteristic (CVC) was obtained for different IR illuminations under high-pressure conditions. IR illumination produced different electrical conductivities at high pressures. This reality shows that the system can operate more conveniently at high pressures for optoelectronic applications. It was determined that the system showed Negative Differential Resistance (NDR) and hysteresis behaviors when appropriate experimental parameters were set. It was seen that the pressure and distance between the electrodes has a significant factor in determining the hysteresis value. AVK, Discharge Light Emission (DLE), and hysteresis behaviors were investigated under different illumination intensities using a semiconductor plasma system. It has been observed that IR illumination creates different electrical conductivities at high pressures. This showed that the system can operate more conveniently at high pressures for optoelectronic applications. It has been observed that CVCs are more stable as the distance between the electrodes decreases. In this study, the IR sensitivity of GaP was tested for the first time. According to the experimental results, it was seen that GaP can be optically excited with IR light when the appropriate distance between the electrodes and the appropriate gas pressure was adjusted.
Keywords
: Infrared GaP photodetector, Microelectronic gas discharge system, Current-voltage characteristic
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