Optimization of an infrared thermal mems-based microbolometer detector

Year 2015, Volume: 36 Issue: 3, 1572 - 1575, 13.05.2015

Zahra Khadem , Nasimeh Moradi Ahmad Afifi

Abstract

Abstract. This paper present a new n-well microbolometer structure (silicon well or n-type impurity) as active element that is obtained from every cmos standard process. Results of manufactured chips show that n-well layer have a TCR value about 0.5%/k. due to the heat flux into the microbolometer, temperature variation occurs within it that, as a consequence, leads to resistivity variation. Because microbolometer performance depends on the structure dimension, it has been tried to obtain optimized structure, precisely, by varying thermal simulation dimensions in ANSYS software. As a result, maximum specific detectivity has been determined equals to 1.391×10⁹ cmHz^1/2/W and responsivity as 3933.6 V/W. This economic method with appropriate performance is suitable for producing large focal plane arrays for uncooled infrared imaging.

Keywords

Infrared beam , microbolometer , specific detectivity , responsivity

References

• Lany. Gordley,” A Space Instrument Application Of An Uncooled Infrared Microbolometer Array”, IEEE,GATS Inc., Newport News, VA 23606,8, 2 000. [2] Niklaus. Frank
• ،٬" MEMS-Based Uncooled Infrared Bolometer Arrays – A Review" ,
• MEMS/MOEMS Technologies and Applications III, SPIE VOL 6836, 68360D,15,2007.
• Tezcan. Deniz Sabuncuoglu
• ،٬" An Uncooled Microbolometer Infrader Detector in any
• standard Cmos technology ", The 10th Int. Conf. on Solid-State Sensors&Actuators
• (TRANSDUCERS’99), pp. 610-613, 4 ،٬ Sendai, Japan, June 7-10, 1999.
• Tezcan. Deniz Sabuncuoglu
• ،٬" A Low-Cost Uncooled Infrared Microbolometer Detector in
• Standard CMOS Technology”،٬ IEEE Transactions on electron devices, VOL. 50, NO. 2,9, FEBRUARY 2003.
• Wang. Li-Xia،٬”Preparation of VO2 Microbolometer for CO2 gas Detection”, IEEE,College of Science, Nanjing University of Posts and Telecommunications, Nanjing, China, 210046,4, 2010.