Effective annealing of ZnO thin films grown by three different SILAR processes

Yıl 2015, Cilt: 1 Sayı: 1, 20 - 24, 20.05.2015

Harun Güney M. Emrah Ertarğın

Öz

In the present work, zinc oxide (ZnO) thin films have been grown three different cation solution on glass substrates by a simple and economic successive ionic layer absorption and reaction method (SILAR). One of each grown different solution films was annealed to investigate to effective annealing at 473 K for 30 minutes. Absorption measurements showed that the optical band-gaps of all ZnO thin films were wide and were about 3.08-3.31 eV. All films’ band gap increased with annealing. Energy-Dispersive-X-Ray-Fluorescence (EDXRF) spectroscopy showed Zn in structures. Wettability of all films was analyzed using a CCD camera. It was found that without any surface modification all films show hydrophobic behavior. Thickness of the films was measured by the gravimetric weight difference method using sensitive microbalance. Thickness of the films increased with annealing. Conductivity of all films was measured by hot probe method and each film shown n-type conductivity.

Anahtar Kelimeler

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Kaynakça

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