LARGE-SCALE SYNTHESIS OF HOMOGENEOUS WS2 FILMS BY PHYSICAL VAPOR DEPOSITION

Year 2023, , 36 - 41, 15.06.2023

Ali Altuntepe , Serkan Erkan , Güldöne Karadeniz

https://doi.org/10.55696/ejset.1301601

Cited By: 1

Abstract

TMDs are semiconductors, unlike graphene, and have a direct bandgap when converted from bulk to thin film. This property makes TMDs an ideal material for optoelectronic and photovoltaic applications due to their strong optical absorption and photoluminescence effect. The WS2, a popular TMD, has unique properties such as low friction coefficient, high thermal stability, and good electrical conductivity, and a bandgap energy of approximately 1.2 eV and 2.2 eV for indirect and direct behaviors. The article also discusses various methods for synthesizing WS2, including chemical vapor deposition (CVD), physical vapor deposition (PVD), hydrothermal synthesis, and solvothermal synthesis. PVD is a scalable method for producing large-area films and coatings with high quality, but the difficulty of controlling the sulfur or selenium sources in this method leads to the need for optimizing growth parameters for large-scale and high-quality WS2 film synthesis. The study reports the successful growth of large-scale and homogeneous WS2 films on a glass substrate using PVD and optimized substrate temperature. The results of this study provide valuable information for the advancement of WS2 film growth techniques and the development of WS2-based semiconductor technologies, such as transistors, diodes, photodetectors, and solar cells.

Keywords

WS2, PVD, substrate temperature

References

• A. Altuntepe et al., "Hybrid transparent conductive electrode structure for solar cell application," vol. 180, pp. 178-185, 2021.
• C. Feng, L. Huang, Z. Guo, and H. J. E. c. Liu, "Synthesis of tungsten disulfide (WS2) nanoflakes for lithium ion battery application," vol. 9, no. 1, pp. 119-122, 2007.
• B. Luo, G. Liu, and L. J. N. Wang, "Recent advances in 2D materials for photocatalysis," vol. 8, no. 13, pp. 6904-6920, 2016.
• S. Tanwar, A. Arya, A. Gaur, and A. J. J. o. P. C. M. Sharma, "Transition metal dichalcogenide (TMDs) electrodes for supercapacitors: a comprehensive review," vol. 33, no. 30, p. 303002, 2021.
• C. Cong, J. Shang, Y. Wang, and T. J. A. O. M. Yu, "Optical properties of 2D semiconductor WS2," vol. 6, no. 1, p. 1700767, 2018.
• M. Donarelli and L. J. S. Ottaviano, "2D materials for gas sensing applications: a review on graphene oxide, MoS2, WS2 and phosphorene," vol. 18, no. 11, p. 3638, 2018.
• C. Lan, C. Li, J. C. Ho, and Y. J. A. E. M. Liu, "2D WS2: from vapor phase synthesis to device applications," vol. 7, no. 7, p. 2000688, 2021.
• H. Shi, H. Pan, Y.-W. Zhang, and B. I. J. P. R. B. Yakobson, "Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2," vol. 87, no. 15, p. 155304, 2013.
• R. Zan, M. A. Olgar, A. Altuntepe, A. Seyhan, and R. J. R. E. Turan, "Integration of graphene with GZO as TCO layer and its impact on solar cell performance," vol. 181, pp. 1317-1324, 2022.
• L. Li, R. Long, and O. V. Prezhdo, "Why chemical vapor deposition grown MoS2 samples outperform physical vapor deposition samples: time-domain ab initio analysis," Nano letters, vol. 18, no. 6, pp. 4008-4014, 2018.
• M. K. S. Bin Rafiq et al., "WS2: a new window layer material for solar cell application," Scientific reports, vol. 10, no. 1, p. 771, 2020.
• H. Zeng et al., "Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides," vol. 3, no. 1, p. 1608, 2013.
• Y. Gao et al., "Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils," Nature communications, vol. 6, no. 1, p. 8569, 2015.
• Y. Niu et al., "Thickness-dependent differential reflectance spectra of monolayer and few-layer MoS2, MoSe2, WS2 and WSe2," Nanomaterials, vol. 8, no. 9, p. 725, 2018.
• J. I. Pankove, Optical processes in semiconductors. Courier Corporation, 1975.
• J. Tauc, "Optical properties and electronic structure of amorphous Ge and Si," Materials Research Bulletin, vol. 3, no. 1, pp. 37-46, 1968.