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            <front>

                <journal-meta>
                                    <journal-id></journal-id>
            <journal-title-group>
                                                                                    <journal-title>Erzincan University Journal of Science and Technology</journal-title>
            </journal-title-group>
                                        <issn pub-type="epub">2149-4584</issn>
                                                                                            <publisher>
                    <publisher-name>Erzincan Binali Yıldırım Üniversitesi</publisher-name>
                </publisher>
                    </journal-meta>
                <article-meta>
                                        <article-id pub-id-type="doi">10.18185/erzifbed.870828</article-id>
                                                                <article-categories>
                                            <subj-group  xml:lang="en">
                                                            <subject>Engineering</subject>
                                                    </subj-group>
                                            <subj-group  xml:lang="tr">
                                                            <subject>Mühendislik</subject>
                                                    </subj-group>
                                    </article-categories>
                                                                                                                                                        <title-group>
                                                                                                                        <article-title>Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range</article-title>
                                                                                                                                                                                                <trans-title-group xml:lang="tr">
                                    <trans-title>6H-SiC/MEH-PPV/Al Schottky Diyotunun Geniş Bir Sıcaklık Aralığında Akım-Gerilim Ölçümleri İle Elektriksel Karakterizasyonu</trans-title>
                                </trans-title-group>
                                                                                                    </title-group>
            
                                                    <contrib-group content-type="authors">
                                                                        <contrib contrib-type="author">
                                                                    <contrib-id contrib-id-type="orcid">
                                        https://orcid.org/0000-0003-3870-7223</contrib-id>
                                                                <name>
                                    <surname>Güzel</surname>
                                    <given-names>Tamer</given-names>
                                </name>
                                                                    <aff>NİĞDE ÖMER HALİSDEMİR ÜNİVERSİTESİ</aff>
                                                            </contrib>
                                                                                </contrib-group>
                        
                                        <pub-date pub-type="pub" iso-8601-date="20210331">
                    <day>03</day>
                    <month>31</month>
                    <year>2021</year>
                </pub-date>
                                        <volume>14</volume>
                                        <issue>1</issue>
                                        <fpage>79</fpage>
                                        <lpage>92</lpage>
                        
                        <history>
                                    <date date-type="received" iso-8601-date="20210129">
                        <day>01</day>
                        <month>29</month>
                        <year>2021</year>
                    </date>
                                                    <date date-type="accepted" iso-8601-date="20210321">
                        <day>03</day>
                        <month>21</month>
                        <year>2021</year>
                    </date>
                            </history>
                                        <permissions>
                    <copyright-statement>Copyright © 2008, Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi</copyright-statement>
                    <copyright-year>2008</copyright-year>
                    <copyright-holder>Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi</copyright-holder>
                </permissions>
            
                                                                                                <abstract><p>Schottky diode with 6H-SiC/MEH-PPV/Al polymer interface was prepared and characterized by using current-voltage data in the temperature range of 80-400K. Important parameters of the produced diode such as ideality factor, barrier height and saturation current were calculated. In addition, the series resistance of the diode was calculated using Cheung and Norde methods. In addition, the calculated diode characteristics were discussed by comparing with each other and with the literature. Strong dependence of the calculated characteristics on temperature has been determined.</p></abstract>
                                                                                                                                    <trans-abstract xml:lang="tr">
                            <p>Bu çalışmada, 6H-SiC/MEH-PPV/Al polimer ara yüzlü Schottky diyotu üretilmiş ve 80-400 K sıcaklık aralığında akım-voltaj verileri kullanılarak karakterize edilmiştir. Üretimi yapılan diyotun İdealite faktörü, engel yüksekliği gibi önemli parametreleri akım-voltaj ölçümlerinden hesaplanmıştır. Doyma akımı ise deneysel sonuçlardan elde edilen grafiklerden belirlenmiştir. Ayrıca diyotun seri direnci Cheung ve Norde yöntemleri kullanılarak hesaplanmıştır. Diğer yandan hesaplanan diyot özellikleri birbirleri ve literatür ile karşılaştırılarak tartışılmıştır. Hesaplanan özelliklerin sıcaklığa güçlü bir şekilde bağlı olduğu belirlenmiştir.</p></trans-abstract>
                                                            
            
                                                            <kwd-group>
                                                    <kwd>6H-SiC/MEH-PPV diode</kwd>
                                                    <kwd>  6H-SiC</kwd>
                                                    <kwd>  MEH-PPV</kwd>
                                                    <kwd>  Schottky barrier</kwd>
                                                    <kwd>  barrier height</kwd>
                                                    <kwd>  ideality factor</kwd>
                                                    <kwd>  resistance</kwd>
                                            </kwd-group>
                                                        
                                                                            <kwd-group xml:lang="tr">
                                                    <kwd>6H-SiC/MEH-PPV diyot</kwd>
                                                    <kwd>  6H-SiC</kwd>
                                                    <kwd>  MEH-PPV</kwd>
                                                    <kwd>  MEH-PPV</kwd>
                                                    <kwd>  Schottky engeli</kwd>
                                                    <kwd>  engel yüksekliği</kwd>
                                                    <kwd>  idealite faktörü</kwd>
                                                    <kwd>  direnç</kwd>
                                            </kwd-group>
                                                                                                            </article-meta>
    </front>
    <back>
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