FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS

Seval Aksoy

doi:10.18038/estubtda.506606

EN

FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS

Abstract

To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopant by the sol gel spin coating method. Morphological properties of the films were studied by emission scanning electron microscopy (FESEM). Then, the n-ZnO:Mn/p-Si heterojunction diodes were fabricated. The diode parameters were determined by current-voltage (I-V) measurements. The values of the diodes were found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn doped ZnO films. At the same time, electrical parameters were determined to compare by using Cheung and Norde methods. According to the evaluation of values obtained by different methods, an improvement on the rectifying properties of the ZnO diode with Mn dopant has been observed. In the continuation of the study, the photovoltaic properties of the heterojunction diodes have been studied. The results obtained at different illumination intensities showed that the diodes are sensitive to light. Capacitance-voltage (C-V) measurements of the fabricated diodes are also investigated in detail.

Keywords

Mn doped ZnO,Sol gel,Heterojunction diode,FESEM,Electrical parameters

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Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Authors

Seval Aksoy ^*
0000-0003-3660-4765
Türkiye

Publication Date

September 26, 2019

Submission Date

January 2, 2019

Acceptance Date

June 11, 2019

Published in Issue

Year 2019 Volume: 20 Number: 3

DOI

https://doi.org/10.18038/estubtda.506606

IZ

https://izlik.org/JA69FN76NU

APA

Aksoy, S. (2019). FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, 20(3), 296-306. https://doi.org/10.18038/estubtda.506606

AMA

1.Aksoy S. FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Estuscience - Se. 2019;20(3):296-306. doi:10.18038/estubtda.506606

Chicago

Aksoy, Seval. 2019. “FABRICATION of N-ZnO:Mn P-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 (3): 296-306. https://doi.org/10.18038/estubtda.506606.

EndNote

Aksoy S (September 1, 2019) FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 3 296–306.

IEEE

[1]S. Aksoy, “FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS”, Estuscience - Se, vol. 20, no. 3, pp. 296–306, Sept. 2019, doi: 10.18038/estubtda.506606.

ISNAD

Aksoy, Seval. “FABRICATION of N-ZnO:Mn P-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20/3 (September 1, 2019): 296-306. https://doi.org/10.18038/estubtda.506606.

JAMA

1.Aksoy S. FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Estuscience - Se. 2019;20:296–306.

MLA

Aksoy, Seval. “FABRICATION of N-ZnO:Mn P-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, vol. 20, no. 3, Sept. 2019, pp. 296-0, doi:10.18038/estubtda.506606.

Vancouver

1.Seval Aksoy. FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Estuscience - Se. 2019 Sep. 1;20(3):296-30. doi:10.18038/estubtda.506606

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