In this study,
Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel
method for three different annealing temperatures. The current-voltage (I-V) and
capacitance-voltage (C-V) characteristics of these structures were investigated
by taking into consideration the effect of the interfacial insulator layer and
surface states (Nss) at room temperature. All of the structures showed
non-ideal I-V behaviour with ideality factor (n) in the range between 2.35 and
4.42 owing to interfacial insulator layer and surface states. The values of Nss
and barrier height (fb) for three samples were calculated. The values of n and Nss
ascend with increasing the insulator layer thickness (δ) while the values of fb decreases.
Bölüm | Physics |
---|---|
Yazarlar | |
Yayımlanma Tarihi | 20 Eylül 2017 |
Yayımlandığı Sayı | Yıl 2017 Cilt: 30 Sayı: 3 |