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Yıl 2014, Cilt: 27 Sayı: 3, 901 - 907, 20.03.2014

Haluk Koralay Nihat Tuğluoğlu Kübra Akgül Şükrü Çavdar

Öz

Kaynakça

  • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York, 1981. [2] E.H. Rhoderick, R.H. Semiconductor Contacts, Clarendon Press, Oxford, 1988. Williams, Metal–
  • N. Tuğluoğlu, B. Barış, H. Gürel, S. Karadeniz, Ö. F. Yüksel, J. Alloys Compd. 582 (2014) 696.
  • A.A.M. Farag, B. Gündüz, F. Yakuphanoğlu, W.A. Farooq, Synth. Met. 160 (2010) 2559.
  • Sandeep Kumar, D. Kanjilal, Nucl. Instrum. Methods Phys. Res., Sect. B:Beam Interact. Mater. Atoms 248 (2006) 109.
  • M.K. Hudait, S.B. Krupanidhi, Physica B 307 (2001) 125.
  • I.M. Afandiyeva, S. Demirezen, Ş. Altındal J. Alloys Compd. 552 (2013) 423.
  • S. T. Ali, A. Kumar, D. N. Bose, J. Mater. Sci. 30 (1995) 5031.
  • W. Chandra, L. K. Ang, K. L. Pey, and C. M. Nug, Appl. Phys. Lett. 90 (2007) 153505.
  • M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York, London, 1970.
  • M.A. Lampert, Rep. Prog. Phys. 27 (1964) 329.
  • A. Türüt, M. Sağlam, Physica B 179 (1992) 285.
  • E.H. Nicollian, A. Goetzberger, Bell. Syst. Tech. J. 46 (1967) 1055.
  • M. Çakar, A. Türüt, Synth. Met. 138 (2003) 549.
  • W.A. Hill, C.C. Coleman, Solid State Electron. 23 (1980) 987.

Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts

Yıl 2014, Cilt: 27 Sayı: 3, 901 - 907, 20.03.2014

Haluk Koralay Nihat Tuğluoğlu Kübra Akgül Şükrü Çavdar

Öz

We have formed a nearly ideal Au/n-Si Schottky contact and deposited gold (Au) metal on n-Si (100) using thermally evaporation method for an explanation of space charge limited current (SCLC) from current-voltage (I-V) characteristic, interface trap density from capacitance-conductance-voltage (C-G-V) characteristics and hopping conduction from conductance-frequency (G-f) characteristic in nearly ideal metal/semiconductor contacts. The device showed good intimate rectifying behavior. To observe the SCLC mechanism and determine interface trap density of the sample, the log (I)−log (V) and C-G-V characteristics are plotted. The interface trap density values for low frequency (5 kHz) and high frequency (1 MHz) are determined as 4.98 x 1014 eV-1 cm-3 and 7.81 x 1012 eV-1 cm3, respectively. At the same time the main diode parameters such as ideality factor and barrier height are determined as 1.048 and 0.807 eV, respectively. These diode parameters refer a nearly ideal metal-semiconductor contact.

Anahtar Kelimeler

Intimate contact I-V Space charge limited current Pool-Frenkel effect ideality factor Schottky barrier height.

Kaynakça

  • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York, 1981. [2] E.H. Rhoderick, R.H. Semiconductor Contacts, Clarendon Press, Oxford, 1988. Williams, Metal–
  • N. Tuğluoğlu, B. Barış, H. Gürel, S. Karadeniz, Ö. F. Yüksel, J. Alloys Compd. 582 (2014) 696.
  • A.A.M. Farag, B. Gündüz, F. Yakuphanoğlu, W.A. Farooq, Synth. Met. 160 (2010) 2559.
  • Sandeep Kumar, D. Kanjilal, Nucl. Instrum. Methods Phys. Res., Sect. B:Beam Interact. Mater. Atoms 248 (2006) 109.
  • M.K. Hudait, S.B. Krupanidhi, Physica B 307 (2001) 125.
  • I.M. Afandiyeva, S. Demirezen, Ş. Altındal J. Alloys Compd. 552 (2013) 423.
  • S. T. Ali, A. Kumar, D. N. Bose, J. Mater. Sci. 30 (1995) 5031.
  • W. Chandra, L. K. Ang, K. L. Pey, and C. M. Nug, Appl. Phys. Lett. 90 (2007) 153505.
  • M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York, London, 1970.
  • M.A. Lampert, Rep. Prog. Phys. 27 (1964) 329.
  • A. Türüt, M. Sağlam, Physica B 179 (1992) 285.
  • E.H. Nicollian, A. Goetzberger, Bell. Syst. Tech. J. 46 (1967) 1055.
  • M. Çakar, A. Türüt, Synth. Met. 138 (2003) 549.
  • W.A. Hill, C.C. Coleman, Solid State Electron. 23 (1980) 987.
Toplam 14 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Physics
Yazarlar

Haluk Koralay

Nihat Tuğluoğlu

Kübra Akgül Bu kişi benim

Şükrü Çavdar

Yayımlanma Tarihi 20 Mart 2014
Yayımlandığı Sayı Yıl 2014 Cilt: 27 Sayı: 3

Kaynak Göster

APA Koralay, H., Tuğluoğlu, N., Akgül, K., Çavdar, Ş. (2014). Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts. Gazi University Journal of Science, 27(3), 901-907.
AMA Koralay H, Tuğluoğlu N, Akgül K, Çavdar Ş. Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts. Gazi University Journal of Science. Ağustos 2014;27(3):901-907.
Chicago Koralay, Haluk, Nihat Tuğluoğlu, Kübra Akgül, ve Şükrü Çavdar. “Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts”. Gazi University Journal of Science 27, sy. 3 (Ağustos 2014): 901-7.
EndNote Koralay H, Tuğluoğlu N, Akgül K, Çavdar Ş (01 Ağustos 2014) Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts. Gazi University Journal of Science 27 3 901–907.
IEEE H. Koralay, N. Tuğluoğlu, K. Akgül, ve Ş. Çavdar, “Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts”, Gazi University Journal of Science, c. 27, sy. 3, ss. 901–907, 2014.
ISNAD Koralay, Haluk vd. “Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts”. Gazi University Journal of Science 27/3 (Ağustos 2014), 901-907.
JAMA Koralay H, Tuğluoğlu N, Akgül K, Çavdar Ş. Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts. Gazi University Journal of Science. 2014;27:901–907.
MLA Koralay, Haluk vd. “Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts”. Gazi University Journal of Science, c. 27, sy. 3, 2014, ss. 901-7.
Vancouver Koralay H, Tuğluoğlu N, Akgül K, Çavdar Ş. Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts. Gazi University Journal of Science. 2014;27(3):901-7.