The Production of Organic Photodetectors and Determination of Electrical Properties for Optical Sensor Applications
Year 2022,
, 267 - 275, 30.09.2022
Serdar Karadeniz
,
Behzad Barış
,
Hande Karadeniz
,
Murat Yıldırım
Abstract
In this work, metal-semiconductor photodiodes with organic interlayers were produced, and their electrical properties were investigated under different light intensities. CongoRed was used as interlayer and grown as a thin film using spin coating technique on p-type silicon substrates cleaned by different chemical methods. The changes in electrical parameters of completed Al/CongoRed/p-Si/Al diodes were investigated under dark and different light intensity. From results obtained, it has been seen that the fabricated devices show photodiode properties, and as a result, they can be employed in opto-electronic applications.
References
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Year 2022,
, 267 - 275, 30.09.2022
Serdar Karadeniz
,
Behzad Barış
,
Hande Karadeniz
,
Murat Yıldırım
References
- Aoki, Y. (2017). Photovoltaic performance of Organic Photovoltaics for indoor energy harvester. Organic Electronics, 48, 194-197. doi:10.1016/j.orgel.2017.05.023
- Attia, A. A., Saadeldin, M. M., Soliman, H. S., Gadallah, A.-S., & Sawaby, K. (2016). Structural and optical properties of p-quaterphenyl thin films and application in organic/inorganic photodiodes. Optical Materials, 62, 711-716. doi:10.1016/j.optmat.2016.10.046
- Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi:10.1063/1.337372
- Cavas, M., Farag, A. A. M., Alahmed, Z. A., & Yakuphanoglu, F. (2013). Photosensors based on Ni-doped ZnO/p-Si junction prepared by sol-gel method, Journal of Electroceramics, 31(3-4), 298-308. doi:10.1007/s10832-013-9839-3
- Chouket, A., Elhouichet, H., Koyama, H., Gelloz, B., Oueslati, M., & Koshida, N. (2010). Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory. Thin Solid Films, 518(6/1), S212-S216. doi:10.1016/j.tsf.2009.10.091
- Dahlan, A. S., Tataroglu, A., Al-Ghamdi A. A., Al-Ghamdi, A. A., Bin-Omran, S., Al-Turki, Y., El-Tantawy, F., & Yakuphanoglu, F. (2015). Photodiode and photocapacitor properties of Au/CdTc/p-Si/Al device. Journal of Alloys and Compounds, 646, 1151-1156. doi:10.1016/j.jallcom.2015.06.068
- Dayan, O., Imer, A. G., Al-Sehemi, A. G., Özdemir, N., Dere, A., Şerbetçi, Z., Al-Ghamdi, A. A., & Yakuphanoglu, F. (2020). Photoresponsivity and photodetectivity properties of copper complex-based photodiode. Journal of Molecular Structure, 1200, 127062. doi:10.1016/j.molstruc.2019.127062
- Imer, A. G., Dere, A., Al-Sehemi, A. G., Dayan, O., Serbetci, Z., Al-Ghamdi, A. A., & Yakuphanoglu, F. (2019). Photosensing properties of ruthenium (II) complex-based photodiode. Applied Physics A, 125(3), 204. doi:10.1007/s00339-019-2504-1
- Kaçuş, H., Çırak, Ç., & Aydoğan, Ş. (2020). Effect of illumination intensity on the characteristics of Co/Congo Red/p-Si/Al hybrid photodiode. Applied Physics A, 126(2), 139. doi:10.1007/s00339-019-3242-0
- Kocyigit, A., Yılmaz, M., Aydogan, S., İncekara, Ü., & Kacus, H. (2021). Comparison of n and p type Si-based Schottky photodiode with interlayered Congo red dye. Materials Science in Semiconductor Processing, 135, 106045. doi:10.1016/j.mssp.2021.106045
- Kocyigit, A., Yılmaz, M., İncekara, Ü., Şahin, Y., & Aydoğan, Ş. (2022). The light detection performance of the congo red dye in a Schottky type photodiode. Chemical Physics Letters, 800, 139673. doi:10.1016/j.cplett.2022.139673
- Kyoung, S., Jung, E.-S., & Sung, M. Y. (2016). Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode. Microelectronic Engineering, 154, 69-73. doi:10.1016/j.mee.2016.01.013
- Manifacier, J.-C., Brortryb, N., Ardebili, R. & Charles, J.-P. (1988). Schottky diode: Comments concerning the diode parameters determination from the forward I‐V plot. Journal of Applied Physics, 64(5), 2502-2504. doi:10.1063/1.341632
- McLean, A. B. (1986). Limitations to the Norde I-V plot. Semiconductor Science and Technology, 1(3), 177-179. doi:10.1088/0268-1242/1/3/003
- Norde, H. (1979). A modified forward I‐V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7), 5052-5053. doi:10.1063/1.325607
- Pham, V. P., Manivannan, G., & Lessard, R. A. (1995). New azo-dye-doped polymer systems as dynamic holographic recording media. Applied Physics A, 60(3), 239-242. doi:10.1007/BF01538397
- Yıldırım, M. (2019). Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters. Journal of Alloys and Compounds, 773, 890-904. doi:10.1016/j.jallcom.2018.09.276