Electrical Transport Mechanisms in Silver Nanoparticles Doped Graphene Quantum Dots /p-Si Diode
Abstract
A novel heterojunction device was fabricated by incorporating silver nanoparticles doped, polyethyleneimine functionalized nitrogen-doped graphene quantum dots (Ag-GQDs) onto p-type silicon via a simple and eco-friendly synthesis method. Electrical characterization under dark conditions yielded a barrier height of 0.71 eV, a series resistance of 260 Ω, and an ideality factor of 5.61 for the Ag-doped diode, suggesting the presence of interfacial traps or structural irregularities. The rectification ratio (RR) measured at ±5 V was 9.4 × 10³. The results indicate that the proposed nanocomposite is well suited for diode applications, where its interfacial properties and charge transport characteristics play a key role in determining device performance.
Keywords
References
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Details
Primary Language
English
Subjects
Nanoelectronics, Nanomaterials
Journal Section
Research Article
Authors
Zeynep Berktaş
*
0000-0001-8876-271X
Türkiye
Publication Date
June 30, 2026
Submission Date
February 20, 2026
Acceptance Date
May 15, 2026
Published in Issue
Year 2026 Volume: 13 Number: 2