Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

Year 2022, Volume: 9 Issue: 4, 554 - 561, 31.12.2022

Jaafar Abdulkareem Mustafa Alsmael , Nuray Urgun , Serhat Orkun Tan , Habibe Tecimer

https://doi.org/10.54287/gujsa.1206332

Cited By: 3

Abstract

Voltage and frequency dependent of capacitance and conductivity versus voltage (C&G/ω–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance (NC) is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance (Rs), and surface states (Nss). Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/ω were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method (CLF-CHF), and the forward biased C−2 vs V graphs (at 10 kHz to 1 MHz) were used to determine the Fermi level (EF), barrier height (ΦB), and concentration of doped acceptor atoms (NA). Accordingly, it has been detected that C and G/ω are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.

Keywords

Metal-Polymer-Semiconductor Structures, Surface States, Negative Capacitance, Series Resistance, Frequency

References

• Alsmael, J. A. M., Tan, S. O., Tecimer, H. U., Altındal, Ş., & Kalandaragh, Y. A. (2022). The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer. IEEE Transactions on Nanotechnology, 21, 528-533. doi:10.1109/TNANO.2022.3207900
• Ata, D., Altındal Yeriskin, S., Tataroğlu, A., & Balbasi, M. (2022). Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure. Journal of Physics and Chemistry of Solids, 169, 110861. doi:10.1016/j.jpcs.2022.110861
• Aziz, S. B. (2016). Modifying Poly(Vinyl Alcohol) (PVA) from Insulator to Small-Bandgap Polymer: A Novel Approach for Organic Solar Cells and Optoelectronic Devices. Journal of Electronic Materials, 45(1), 736-745. doi:10.1007/s11664-015-4191-9
• Bakkaloğlu, Ö. F., Ejderha, K., Efeoğlu, H., Karataş, Ş., & Türüt, A. (2021). Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures. Journal of Molecular Structure, 1224, 129057. doi:10.1016/j.molstruc.2020.129057
• Çetinkaya, H. G., Sevgili, Ö., & Altındal, Ş. (2019). The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics. Physica B: Condensed Matter, 560, 91-96. doi:10.1016/j.physb.2019.02.038
• Gaaz, T. S., Sulong, A. B., Akhtar, M. N., Kadhum, A. A. H., Mohamad, A. B., Al-Amiery, A. A., & McPhee, D. J. (2015). Properties and applications of polyvinyl alcohol, halloysite nanotubes and their nanocomposites. Molecules, 20(12), 22833-22847. doi:10.3390/molecules201219884
• Hou, G., Li, Y., & Wang, X. (2018). Research Progress of Zinc Ferrite as Photocatalyst. Cailiao Daobao/Materials Review, 32(1), 51-57. doi:10.11896/j.issn.1005-023X.2018.01.006
• Neamen, D. A. (1992). Semiconductor Physics and Devices, Basic Principles. McGraw-Hill.
• Patil, J. Y., Nadargi, D. Y., Gurav, J. L., Mulla, I. S., & Suryavanshi, S. S. (2014). Glycine combusted ZnFe2O4 gas sensor: Evaluation of structural, morphological and gas response properties. Ceramics International, 40(7) Part B, 10607-10613. doi:10.1016/j.ceramint.2014.03.041
• Shultz, M. D., Carpenter, E. E., Morrison, S. A., & Calvin, S. (2006). Cation occupancy determination in manganese zinc ferrites using Fourier transform infrared spectroscopy. Journal of Applied Physics, 99(8), 08M901. doi:10.1063/1.2151831
• Slavu, L. M., Rinaldi, R., & Di Corato, R. (2021). Application in nanomedicine of manganese-Zinc ferrite nanoparticles. Applied Sciences, 11(23), 11183. doi:10.3390/app112311183
• Subba Reddy, C. V., Han, X., Zhu, Q.-Y., Mai, L.-Q., & Chen, W. (2006). Dielectric spectroscopy studies on (PVP + PVA) polyblend film. Microelectronic Engineering, 83(2), 281-285. doi:10.1016/j.mee.2005.08.010
• Sze, S. M. (1981). Physics of Semiconductor Devices. (2nd edition). Wiley–Blackwell.
• Tecimer, H. U., Alper, M. A., Tecimer, H., Tan, S. O., & Altındal, Ş., (2018). Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes. Polymer Bulletin, 75(9), 4257-4271. doi:10.1007/s00289-018-2274-5
• Unnithan, A. R., Arathyram, R. S., & Kim, C. S. (2015). Chapter 3 - Electrospinning of Polymers for Tissue Engineering. In: S. Thomas, Y. Grohens, & N. Ninan (Eds.), Nanotechnology Applications for Tissue Engineering (pp. 45-55). William Andrew Publishing. doi:10.1016/B978-0-323-32889-0.00003-0
• Vijatović-Petrović, M. M., Džunuzović, A., Bobić, J. D., Ilić, N., Stijepović, I., & Stojanović, B. D. (2020). Study of barium titanate/nickel-zinc ferrite based composites: Electrical and magnetic properties and humidity sensitivity. Processing and Application of Ceramics, 14(1), 9-18. doi:10.2298/PAC2001009V
• Zeyrek, S., Acaroǧlu, E., Altindal, Ş., Birdoǧan, S., & Bülbül, M. M. (2013). The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes. Current Applied Physics, 13(7), 1225-1230. doi:10.1016/j.cap.2013.03.014
• Zhang, F., Wei, C., Hu, Y., & Wu, H. (2015). Zinc ferrite catalysts for ozonation of aqueous organic contaminants: Phenol and bio-treated coking wastewater. Separation and Purification Technology, 156, Part 2, 625-635. doi:10.1016/j.seppur.2015.10.058