Araştırma Makalesi
BibTex RIS Kaynak Göster
Yıl 2020, Cilt: 8 Sayı: 4, 241 - 244, 31.12.2020
https://doi.org/10.18100/ijamec.801730

Öz

Kaynakça

  • A. J. F. a. R. S. R. T. Naayagi, “Highpower bidirectional DC–DC converter for aerospace applications,” IEEE Trans. Pow. Electron, pp. 4366-4379, 2012.
  • Y. K. I. L. v. J. L. S. Choi, “Isolated PFC converter based on an ADAB structure with harmonic modulation for EV chargers,” J. Power Electron., vol. 18, no. 2, pp. 383-394, 2018.
  • Q. S. v. W. L. B. Zhao, “A practical solution of highfrequency-link bidirectional solid-state transformer based on,” IEEE Trasaction of Industrial Electronics, vol. 62, no. 7, pp. 4587-4597, 2015.
  • Q. S. W. L. a. Y. S. Biao Zhao, “Overview of Dual-Active-Bridge Isolated Bidirectional DC-DC Converter for High-Frequency-Link Power-Conversion System,” IEEE TRANSACTIONS ON POWER ELECTRONICS, pp. 4091 - 4106, 2014.
  • C.-M. Lai, “Development of a Novel Bidirectional DCDC Converter Topology with High Voltage Conversion Ratio for Electric Vehicles and DC-Microgrids,” 2016.
  • D. Ravi, B. M. Reddy and P. Samuel, “Bidirectional dc to dc Converters: An Overview of Various Topologies, Switching Schemes and Control Techniques,” International Journal of Engineering and Technology, pp. 360 - 365, 2018.
  • M. S. S. W. v. J. W. K. J. Biela, “SiC versus SiEvaluation of potentials for performance improvement of inverter and dc-dc converter systems by SiC power semiconductors,” IEEE Transaction on Industrial Electronics, pp. 2872-2882, 2011.
  • N. Oswald, P. Anthony and B. Stark, “An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation with Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations,” IEEE Transactions on Power Electronics, pp. 2393-2409, 2014.
  • Y. Xie, C. Chen, Z. Huang, T. Liu, Y. Kang and F. Luo, “High Frequency Conducted EMI Investigation on Packaging and Modulation for a SiC-Based High Frequency Converter,” IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1789 - 1804, 2019.
  • G.-J. Su, “Comparison of Si, SiC, and GaN based Isolation Converters for Onboard Charger Applications,” in 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018.
  • M. H. Rashid, Power Electronics Handbook, Oxford: Butterworth-Heinemann is an imprint of Elsevier, 2018.
  • K. Kostov, Design and Characterization of Single-Phase Power Filters, HELSINKI, 2009.
  • M. Montrose and E. Nakauchi, Testing for EMC Compliance Approaches and Techniques, Canada: A JOHN WILEY & SONS, INC., PUBLICATION, 2004.

Determination of Conducted EMI in SiC Based Dual Active Bridge Converter

Yıl 2020, Cilt: 8 Sayı: 4, 241 - 244, 31.12.2020
https://doi.org/10.18100/ijamec.801730

Öz

Power converters are required to work faster and with higher power density with the developing technology. Therefore, the converter is expected to work in more than one direction. Usage of Dual Active Bridge DC-DC Converter is an example. To increase the power density of the converters, it is necessary to increase the switching frequency. In conventional Si MOSFET based converters, power losses are very high and cause high electromagnetic interferences at high frequencies. These disadvantages lead developers to the use of wide-band gap semiconductor based converters such as SiC However, SiC MOSFETs will also emit electromagnetic interference (EMI) above a certain frequency. In this study, the EMI, emitted at certain frequencies by the Dual Active Bridge (DAB) DC-DC Converter, is simulated by the LTspice. It was observed that the Si-based inverter parts of the DAB converter generate 10 V EMI on the linear base, that means 140 dBµV EMI on the logarithmic base, at 20 kHz. The SiC-based converter does not emit any noise at the same frequency. However, when the frequency was increased to 250 kHz, it was determined that the SiC based converter emitted 2.3 V noise on the linear base, thus 123 dBµV noise on the logarithmic base. This study shows that not only Si MOSFET’s but only SiC MOSFET’s emit EMI over a certain frequency.

Kaynakça

  • A. J. F. a. R. S. R. T. Naayagi, “Highpower bidirectional DC–DC converter for aerospace applications,” IEEE Trans. Pow. Electron, pp. 4366-4379, 2012.
  • Y. K. I. L. v. J. L. S. Choi, “Isolated PFC converter based on an ADAB structure with harmonic modulation for EV chargers,” J. Power Electron., vol. 18, no. 2, pp. 383-394, 2018.
  • Q. S. v. W. L. B. Zhao, “A practical solution of highfrequency-link bidirectional solid-state transformer based on,” IEEE Trasaction of Industrial Electronics, vol. 62, no. 7, pp. 4587-4597, 2015.
  • Q. S. W. L. a. Y. S. Biao Zhao, “Overview of Dual-Active-Bridge Isolated Bidirectional DC-DC Converter for High-Frequency-Link Power-Conversion System,” IEEE TRANSACTIONS ON POWER ELECTRONICS, pp. 4091 - 4106, 2014.
  • C.-M. Lai, “Development of a Novel Bidirectional DCDC Converter Topology with High Voltage Conversion Ratio for Electric Vehicles and DC-Microgrids,” 2016.
  • D. Ravi, B. M. Reddy and P. Samuel, “Bidirectional dc to dc Converters: An Overview of Various Topologies, Switching Schemes and Control Techniques,” International Journal of Engineering and Technology, pp. 360 - 365, 2018.
  • M. S. S. W. v. J. W. K. J. Biela, “SiC versus SiEvaluation of potentials for performance improvement of inverter and dc-dc converter systems by SiC power semiconductors,” IEEE Transaction on Industrial Electronics, pp. 2872-2882, 2011.
  • N. Oswald, P. Anthony and B. Stark, “An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation with Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations,” IEEE Transactions on Power Electronics, pp. 2393-2409, 2014.
  • Y. Xie, C. Chen, Z. Huang, T. Liu, Y. Kang and F. Luo, “High Frequency Conducted EMI Investigation on Packaging and Modulation for a SiC-Based High Frequency Converter,” IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1789 - 1804, 2019.
  • G.-J. Su, “Comparison of Si, SiC, and GaN based Isolation Converters for Onboard Charger Applications,” in 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018.
  • M. H. Rashid, Power Electronics Handbook, Oxford: Butterworth-Heinemann is an imprint of Elsevier, 2018.
  • K. Kostov, Design and Characterization of Single-Phase Power Filters, HELSINKI, 2009.
  • M. Montrose and E. Nakauchi, Testing for EMC Compliance Approaches and Techniques, Canada: A JOHN WILEY & SONS, INC., PUBLICATION, 2004.
Toplam 13 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Research Article
Yazarlar

Samet Yalcin 0000-0002-1097-981X

Tuna Göksu 0000-0002-2334-1698

Selami Kesler 0000-0002-7027-1426

Okan Bingöl 0000-0001-9817-7266

Yayımlanma Tarihi 31 Aralık 2020
Yayımlandığı Sayı Yıl 2020 Cilt: 8 Sayı: 4

Kaynak Göster

APA Yalcin, S., Göksu, T., Kesler, S., Bingöl, O. (2020). Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers, 8(4), 241-244. https://doi.org/10.18100/ijamec.801730
AMA Yalcin S, Göksu T, Kesler S, Bingöl O. Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers. Aralık 2020;8(4):241-244. doi:10.18100/ijamec.801730
Chicago Yalcin, Samet, Tuna Göksu, Selami Kesler, ve Okan Bingöl. “Determination of Conducted EMI in SiC Based Dual Active Bridge Converter”. International Journal of Applied Mathematics Electronics and Computers 8, sy. 4 (Aralık 2020): 241-44. https://doi.org/10.18100/ijamec.801730.
EndNote Yalcin S, Göksu T, Kesler S, Bingöl O (01 Aralık 2020) Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers 8 4 241–244.
IEEE S. Yalcin, T. Göksu, S. Kesler, ve O. Bingöl, “Determination of Conducted EMI in SiC Based Dual Active Bridge Converter”, International Journal of Applied Mathematics Electronics and Computers, c. 8, sy. 4, ss. 241–244, 2020, doi: 10.18100/ijamec.801730.
ISNAD Yalcin, Samet vd. “Determination of Conducted EMI in SiC Based Dual Active Bridge Converter”. International Journal of Applied Mathematics Electronics and Computers 8/4 (Aralık 2020), 241-244. https://doi.org/10.18100/ijamec.801730.
JAMA Yalcin S, Göksu T, Kesler S, Bingöl O. Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers. 2020;8:241–244.
MLA Yalcin, Samet vd. “Determination of Conducted EMI in SiC Based Dual Active Bridge Converter”. International Journal of Applied Mathematics Electronics and Computers, c. 8, sy. 4, 2020, ss. 241-4, doi:10.18100/ijamec.801730.
Vancouver Yalcin S, Göksu T, Kesler S, Bingöl O. Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers. 2020;8(4):241-4.

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