MOSFET Based Parallel Inductance Simulator

Yıl 2019, Cilt: 9 Sayı: 1, 30 - 38, 01.03.2019

Yunus Babacan , Abdullah Yesıl

https://doi.org/10.21597/jist.428412

Öz

In this paper inductance simulator based on MOSFET-only is presented. Inductance simulator consists of only two MOSFETs and a grounded capacitor in the core structure while the whole structure is made up of only five MOSFETs. It is used MOS-capacitance insteads of external capacitor in the presented inductance simulator. Inductance value can be tuned electronically by changing biasing voltage. Layout is laid by Cadence software and post-layout simulations are given in the paper. Second order voltage mode band-pass filter is given to demonstrate the performance of the proposed inductance simulator. Simulation results are in good agreement with theoretical results.

Anahtar Kelimeler

MOSFET-only, inductance simulator

MOSFET tabanlı kayıplı Endüktans benzetimi

Öz

Bu çalışmada sadece MOSFET’lerden oluşan endüktans benzetimi devresi sunulmuştur. Ana yapı olarak sadece iki transistordan ve bir topraklı kapasiteden meydana gelmiştir. Kutuplanması yapılmış tüm yapı ise sadece beş transistordan oluşmaktadır. Devrede harici kapasite yerine MOS-kapasite kullanılmıştır. Devrenin endüktans değeri elektronik olarak ayarlanmaktadır. Devrenin serimi Cadence programı yardımıyla çizilmiş ve serim sonrası benzetimler makaleye eklenmiştir. Ayrıca sunulan endüktans benzetiminin performansını belirtmek amacıyla ikinci dereceden gerilim-modlu band-geçiren filtre devresi kurulmuştur. Benzetim sonuçları teorik sonuçlar ile uyum içinde olduğu görülmektedir.

Anahtar Kelimeler

MOSFET-C, endüktans benzetimi

Kaynakça

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