The Structural Properties of MoO3 Thin Films Grown by Magnetron Sputtering Technique

Year 2018, Volume: 1 Issue: 1, 52 - 56, 06.08.2018

Beyhan Tatar , Canan Yöney Dilek Demiroğlu

https://izlik.org/JA77XX76CR

Abstract

The molybdenum trioxide MoO₃ thin films were growth on
c-Si substrates by magnetron sputtering technique. The structural and
morphological properties of MoO₃ thin films were investigated by XRD, RAMAN and SEM
analysis. Prior to annealing process, X-ray diffractogram indicated that MoO₃ thin films vere
amorphous nature. All of the MoO₃ thin films were applied three different annealing
temperature and obtained optimum annealing temperature with 300 ⁰C. XRD patterns of annealed thin films showed that these MoO₃
thin films have polycrystalline nature with 2θ
peak at 12˚,23˚, 25˚, 38˚, 55˚and 58˚ corresponding to the (020), (110), (040), (060), (112) and (081) planes.  RAMAN spectrum of the MoO₃ thin films were
determined 14 Raman active peaks belong to α-phase MoO₃. The surface morphology of the MoO₃ thin films as
deposited has appeared to be uniform with smaller grains and exhibits a coarse
structure. Annealing of the MoO₃ thin films favors growth and
agglomeration of small grains.

Keywords

MoO3 thin films , Metal oxide semiconductors , Surface Properties , Structural Properties

References

• 1] K. AL-Abdullah, Energy Procedia, 19, (2012).
• [2] P.C. Lansåker, P. Petersson, G.A. Niklasson, C.G. Granqvist, Sol. Energy Mater.Sol. Cells, 117, (2013).
• [3] A.L. Daltin, A. Addad, J.P. Chopart, Microelectron. Eng., 108, (2013).
• [4] T. Audichon, E. Mayousse, T.W. Napporn, C. Morais, C. Comminges, K.B. Kokoh,Electrochim. Acta, 132, (2014).
• [5] L. Boudaoud, N. Benramdane, A. Bouzidi, A. Nekerala, R. Desfeux, Optik e Int. J.Light Electron Opt., 127, (2016).
• [6] B. Mauvernay, L. Presmanes, S. Capdeville, V.G. de Resende, E. De Grave,C. Bonningue, P. Tailhades, Thin Solid Films, 515, (2007).
• [7] W. Peng, J. Li, B. Chen, N. Wang, G. Luo, F. Wei, Catal. Commun., 74, (2016).
• [8] J. Yao, K. Hashimoto, A. Fujishima, Nature 355, (1992).
• [9] C. Imawan, F. Solzbacher, H. Steffes, E. Obermeier, Sens. Actuators B, 64, (2000).
• [10] J. K. Shin, S. M. Jeong, Y. Tak, S. H. Baeck, Research on Chemical Intermediates, 36, (2010).
• [11] L. Seguin, M. Figlarz, R. Cavagnat, J.C. Lassegues, Spectrochimica Acta Part A, 51 (1995).