The Structural Properties of MoO3 Thin Films Grown by Magnetron Sputtering Technique

Abstract

The molybdenum trioxide MoO₃ thin films were growth on c-Si substrates by magnetron sputtering technique. The structural and morphological properties of MoO₃ thin films were investigated by XRD, RAMAN and SEM analysis. Prior to annealing process, X-ray diffractogram indicated that MoO₃ thin films vere amorphous nature. All of the MoO₃ thin films were applied three different annealing temperature and obtained optimum annealing temperature with 300 ⁰C. XRD patterns of annealed thin films showed that these MoO₃ thin films have polycrystalline nature with 2θ peak at 12˚,23˚, 25˚, 38˚, 55˚and 58˚ corresponding to the (020), (110), (040), (060), (112) and (081) planes.  RAMAN spectrum of the MoO₃ thin films were determined 14 Raman active peaks belong to α-phase MoO₃. The surface morphology of the MoO₃ thin films as deposited has appeared to be uniform with smaller grains and exhibits a coarse structure. Annealing of the MoO₃ thin films favors growth and agglomeration of small grains.

Keywords

• MoO3 thin films,Metal oxide semiconductors,Surface Properties,Structural Properties

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