DFT study: investigation of electronic properties and bond behavior of graphene structure doped with various boron clusters
Abstract
2d materials occupy a very important place, especially in industrial areas. Graphene is used in many areas through its stable structure, high durability and special electronic structure. The graphene surface is modified by various methods in order to increase the efficiency of the structure according to the working area and to obtain more stable structures in different conditions. In this study, the electronic properties of the doped various boron clusters on graphene were examined using a computational program-DFT and stable structures were observed. The primary reason for choosing boron atoms as the atom to be doped is that the boron atom is as light as carbon. Among the boron cluster, BN (9 ≥ N ≥ 3), the most stable structures are B5 and B6 cluster structures. Only the B3-Gr structure graphene can stand horizontally on the surface. To understand bond type of atoms, the bond properties are calculated with Crystal orbital Hamiltonian population analysis. The vast majority of structures show semiconductor properties while B3-Gr Configuration and B6-Gr structure.
Keywords
References
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Details
Primary Language
English
Subjects
Surface Properties of Condensed Matter
Journal Section
Research Article
Authors
Hilal Küçük
*
0000-0002-6655-5602
Türkiye
İsa Baruğ
0009-0005-6830-3248
Türkiye
Meryem Yurt
0009-0009-6589-1768
Türkiye
Publication Date
June 30, 2026
Submission Date
October 28, 2025
Acceptance Date
January 7, 2026
Published in Issue
Year 2026 Number: 065