Politeknik Dergisi 2147-9429 Gazi Üniversitesi 10.2339/politeknik.1338855 Electrical Engineering (Other) Elektrik Mühendisliği (Diğer) Düşük Gerilim Düşük Güçlü MOSFET Tasarım Yöntemlerinin İncelenmesi Investigation of Low Voltage Low Power MOSFET Design Methods https://orcid.org/0009-0002-5547-8805 Doğan Sekreter Pelin GEBZE TEKNİK ÜNİVERSİTESİ https://orcid.org/0000-0001-5220-5188 Uygur Atilla GEBZE TEKNİK ÜNİVERSİTESİ https://orcid.org/0000-0001-5478-6908 Alçı Mustafa Erciyes Üniversitesi 04 21 2026 29 4 1 10 08 07 2023 01 22 2024 Copyright © 1998, Politeknik Dergisi 1998 Politeknik Dergisi

ÖZ Düşük güçlü ve düşük gerilimli sistemler, taşınabilir elektronik cihazlardan otomotiv sektörüne kadar birçok alanda karşımıza çıkmaktadır. Bu nedenle bu konu üzerinde birçok çalışma yapılmaktadır. MOSFET’lerin, veriminin yüksek, anahtarlama hızının yüksek ve boyutlarının küçük olmasından dolayı analog devre tasarımında kullanılan bir yapıdır. Fakat düşük gerilim düşük güçlü sistemlerde eşik geriliminin oransal olarak düşük olmaması karşılaşılan problemlerden biridir. Eşik gerilimi probleminin üstesinden gelmek amacıyla geliştirilen yöntemler bu çalışmada kapsamlı bir literatür çalışması yapılarak incelenmektedir. Geliştirilen yöntemler detaylı olarak incelenmekte ve devre yapılarına sunduğu avantajlar ve dezavantajlar hakkında bilgiler de verilmektedir.

ABSTRACT Low-power and low-voltage systems are available in a variety of industries, including automotive and portable electronics. Therefore, many studies are carried out on this subject. MOSFETs are a structure used in analog circuit design due to their high efficiency, fast switching and small size. However, one of the problems encountered is that the threshold voltage is not proportionally low in low voltage low power systems. The methods developed to overcome the threshold voltage problem are examined in this article by making a comprehensive literature study. The developed methods are examined in detail and information about the advantages and disadvantages offered to the circuit structures is also given.

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