Politeknik Dergisi 2147-9429 Gazi Üniversitesi 10.2339/politeknik.1626006 Material Physics Malzeme Fiziği The frequency-dependent electrical properties and fabrication of Al/NiO/p-Si Schottky Diode Al/NiO/p-Si Schottky Diyotun frekansa bağlı elektriksel özellikleri ve fabrikasyonu https://orcid.org/0000-0003-1740-1444 Sevgili Ömer KUTAHYA HEALTH SCIENCES UNIVERSITY https://orcid.org/0000-0003-2318-9718 Orak İkram BİNGÖL ÜNİVERSİTESİ, SAĞLIK HİZMETLERİ MESLEK YÜKSEKOKULU https://orcid.org/0000-0002-3935-9649 Özel Sultan Süleyman BAYBURT ÜNİVERSİTESİ, MERKEZİ ARAŞTIRMA LABORATUVARI UYGULAMA VE ARAŞTIRMA MERKEZİ https://orcid.org/0000-0002-3689-0469 Özel Faruk RECEP TAYYİP ERDOĞAN ÜNİVERSİTESİ, MÜHENDİSLİK VE MİMARLIK FAKÜLTESİ, MAKİNE MÜHENDİSLİĞİ BÖLÜMÜ 04 21 2026 29 4 1 7 01 23 2025 10 21 2025 Copyright © 1998, Politeknik Dergisi 1998 Politeknik Dergisi

The fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system. The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 µm for NiO interfacial layer. The capacitance-voltage (C-V) and conductance-voltage (G/-V) measurements of the fabricated SD were performed in the 50 kHz to 5 MHz frequency range and in the -3 V to +3 V range. The Nicollian-Brews method was employed to calculate the series resistance (Rs), while the high-low frequency capacitance method (CHF-CLF) was used to calculate the surface states (Nss). The value of the Nss was determined to be in the order of 1012 eV-1cm-2. These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.

Al/NiO/p-Si Schottky diyot (SD) üretimi bir termal buharlaştırma sistemi kullanılarak oluşturulmuştur. Bir arayüzey tabakası olarak kullanılan NiO’in yapısal analizi Taramalı Elektron Mikroskobu (SEM) kullanılarak gerçekleştirilmiş ve SEM yan kesit görüntüsünden NiO arayüzey tabakasının kalınlığı 0,0345 µm olarak bulunmuştur. Al/NiO/p-Si SD’nin elektriksel özelliklerini frekansa bağlı karakterize etmek amacıyla C-V ve G/-V ölçümleri 50-5000 kHz frekans aralığında ve -3 V ile +3 V aralığında gerçekleştirilmiştir. Seri direnci (Rs) hesaplamak için Nicollian-Brews yöntemi kullanılırken, arayüzey durumlarını (Nss) hesaplamak için yüksek-düşük frekans kapasitans yöntemi (CHF-CLF) kullanılmıştır. Nss değerinin 1012 eV-1cm-2 mertebesinde olduğu belirlenmiştir. Bu bulgular, NiO'nun elektronik cihazlardaki geleneksel yalıtkan katmanlara umut verici bir alternatif olduğunu göstermektedir.

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