PDF EndNote BibTex RIS Kaynak Göster

Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Yıl 2017, Cilt 41, Sayı 4, 337 - 343, 01.08.2017

Öz

A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN$_{x}$As$_{1-x-y}$P$_{y}$ with that of GaAs$_{1-y}$P$_{y}$ on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs$_{1-y}$P$_{y}$/GaP is greater than that of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP for all concentrations. We have demonstrated that one can improve the optical confinement factor of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP by using an Al$_{z}$Ga$_{1-z}$P cladding layer.

Yıl 2017, Cilt 41, Sayı 4, 337 - 343, 01.08.2017

Öz

Ayrıntılar

Bölüm Makaleler
Yazarlar

Ömer Lütfi ÜNSAL Bu kişi benim


Beşire GÖNÜL Bu kişi benim

Yayımlanma Tarihi 1 Ağustos 2017
Yayınlandığı Sayı Yıl 2017, Cilt 41, Sayı 4

Kaynak Göster

Bibtex @ { tbtkphysics401938, journal = {Turkish Journal of Physics}, issn = {1300-0101}, eissn = {1303-6122}, address = {}, publisher = {TÜBİTAK}, year = {2017}, volume = {41}, number = {4}, pages = {337 - 343}, title = {Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates}, key = {cite}, author = {Ünsal, Ömer Lütfi and Gönül, Beşire} }
APA Ünsal, Ö. L. & Gönül, B. (2017). Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates . Turkish Journal of Physics , 41 (4) , 337-343 . Retrieved from https://dergipark.org.tr/tr/pub/tbtkphysics/issue/35852/401938
MLA Ünsal, Ö. L. , Gönül, B. "Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates" . Turkish Journal of Physics 41 (2017 ): 337-343 <https://dergipark.org.tr/tr/pub/tbtkphysics/issue/35852/401938>
Chicago Ünsal, Ö. L. , Gönül, B. "Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates". Turkish Journal of Physics 41 (2017 ): 337-343
RIS TY - JOUR T1 - Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates AU - Ömer LütfiÜnsal, BeşireGönül Y1 - 2017 PY - 2017 N1 - DO - T2 - Turkish Journal of Physics JF - Journal JO - JOR SP - 337 EP - 343 VL - 41 IS - 4 SN - 1300-0101-1303-6122 M3 - UR - Y2 - 2022 ER -
EndNote %0 Turkish Journal of Physics Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates %A Ömer Lütfi Ünsal , Beşire Gönül %T Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates %D 2017 %J Turkish Journal of Physics %P 1300-0101-1303-6122 %V 41 %N 4 %R %U
ISNAD Ünsal, Ömer Lütfi , Gönül, Beşire . "Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates". Turkish Journal of Physics 41 / 4 (Ağustos 2017): 337-343 .
AMA Ünsal Ö. L. , Gönül B. Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates. Turkish Journal of Physics. 2017; 41(4): 337-343.
Vancouver Ünsal Ö. L. , Gönül B. Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates. Turkish Journal of Physics. 2017; 41(4): 337-343.
IEEE Ö. L. Ünsal ve B. Gönül , "Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates", Turkish Journal of Physics, c. 41, sayı. 4, ss. 337-343, Ağu. 2017