Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells

Rahaf Almohaimeed; Munirah Altmami; Renad Alharbi

Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells

Abstract

Surface reflection of incident light negatively impacts solar cell performance. This can be rectified by applying an anti-reflection coating (ARC). This study examines the effect of double-layer ARC materials deposited by different techniques including thermal evaporation and plasma-enhanced chemical vapor deposition onto dilute nitride GaAs multi-junction solar cells. The effect of double–layer ARC on dilute nitride GaAs multi-junction solar cells is investigated by comparing optical and electrical properties of coated and uncoated cells. Ellipsometry and reflectometry were used to assess optical qualities, while quantum efficiency tests and electrochemical capacitance-voltage analysis were applied to quantify electrical properties.

Keywords

GaAs 4-junctions solar cells, Dilute nitride solar cells, Anti-reflection coating, Molecularbeam epitaxy, Photolithography, Quantum efficiency, High efficiency photovoltaics

Supporting Institution

Princess Nourah University (PNU) and King Abdulaziz City for Science and Technology (KACST)

Thanks

Authors would like to thank Princess Nourah University (PNU) and King Abdulaziz City for Science and Technology (KACST) for their support and contributions to this work.

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Details

Primary Language

English

Subjects

Material Physics

Journal Section

Research Article

Authors

Rahaf Almohaimeed ^*
0009-0001-3508-2769
Saudi Arabia

Munirah Altmami
0009-0005-8550-392X
Saudi Arabia

Renad Alharbi
0009-0008-1214-2168
Saudi Arabia

Early Pub Date

December 31, 2025

Publication Date

December 31, 2025

Submission Date

August 31, 2025

Acceptance Date

December 10, 2025

Published in Issue

Year 2025 Volume: 1 Number: 1

IZ

https://izlik.org/JA88SG72JR

APA

Almohaimeed, R., Altmami, M., & Alharbi, R. (2025). Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells. Universal Materials and Physics, 1(1), 39-49. https://izlik.org/JA88SG72JR

AMA

1.Almohaimeed R, Altmami M, Alharbi R. Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells. Univ. Mater. Phys. 2025;1(1):39-49. https://izlik.org/JA88SG72JR

Chicago

Almohaimeed, Rahaf, Munirah Altmami, and Renad Alharbi. 2025. “Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells”. Universal Materials and Physics 1 (1): 39-49. https://izlik.org/JA88SG72JR.

EndNote

Almohaimeed R, Altmami M, Alharbi R (December 1, 2025) Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells. Universal Materials and Physics 1 1 39–49.

IEEE

[1]R. Almohaimeed, M. Altmami, and R. Alharbi, “Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells”, Univ. Mater. Phys., vol. 1, no. 1, pp. 39–49, Dec. 2025, [Online]. Available: https://izlik.org/JA88SG72JR

ISNAD

Almohaimeed, Rahaf - Altmami, Munirah - Alharbi, Renad. “Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells”. Universal Materials and Physics 1/1 (December 1, 2025): 39-49. https://izlik.org/JA88SG72JR.

JAMA

1.Almohaimeed R, Altmami M, Alharbi R. Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells. Univ. Mater. Phys. 2025;1:39–49.

MLA

Almohaimeed, Rahaf, et al. “Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells”. Universal Materials and Physics, vol. 1, no. 1, Dec. 2025, pp. 39-49, https://izlik.org/JA88SG72JR.

Vancouver

1.Rahaf Almohaimeed, Munirah Altmami, Renad Alharbi. Enhancement of Gallium Arsenide GaAs and Diluted Nitride 4-Junction Solar Cells. Univ. Mater. Phys. [Internet]. 2025 Dec. 1;1(1):39-4. Available from: https://izlik.org/JA88SG72JR