This study delves into the diamond growth process on distinct substrates, namely Seed A and Seed B, fabricated using different production methods from separate companies. Seed A, employing ion implantation and the lift-off method akin to semiconductor production, stands distinct from Seed B. Preceding the growth phase, thorough chemical cleaning was administered to the substrates to mitigate potential organic or inorganic contamination from laser cutting, polishing, and surface fabrication. The diamond growth was executed utilizing the MWCVD system, where plasma was generated under 5 Torr pressure and a 500W microwave power. The investigation focused on understanding the impact of diamond growth rates under varying CH4/H2 gas ratios. Substrates were strategically placed on the molybdenum surface using "mosaic growth" methods, ensuring no gaps between them. Photoluminescence spectra for Seed A and Seed B were meticulously examined to unravel insights into their respective characteristics. Additionally, this study pioneers a novel approach, coating the molybdenum surface with AlTiN and TiN using the physical vapor deposition (PVD) method. This innovative surface modification, a first in the literature to the best of our knowledge, aims to enhance the properties and performance of the diamond growth process. The findings of this comprehensive study contribute to the evolving understanding of diamond growth dynamics on different substrates and introduce a novel surface modification technique, opening avenues for further advancements in diamond film applications.