Öz
Electrical parameters of Erbium Oxide (Er2O3)
MOS capacitors depending on frequency were investigated deeply, in this paper.
Er2O3 layers were deposited on p–Si substrates with (100)
oriented using RF–magnetron sputtering method. The films were annealed at 500 oC
in N2 environment. C–V characteristic changes reduce with increasing
frequency. G/ω–V characteristic variations show different behavior between
10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are
caused by interface states between silicon and Er2O3
layer, series resistance (Rs) effects and the relaxation time of
trapped states. The Rs values calculated by the Cma and Gma
values at the high frequency and decrease with rising frequency. Then, Cc–V
and Gc/ω–V characteristic curves were measured and compared to first
measurements. In addition, interface state density (Dit), diffusion
potential (VD), and barrier height (B) were calculated and these results demonstrate
similar behaviors.