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Bath Temperature Effect on c-axis Preferred Orientations and Band Gap of Semiconductor ZnO Thin Films

Yıl 2019, Cilt: 6 Sayı: 1, 24 - 28, 28.06.2019

Sinan Temel

https://doi.org/10.35193/bseufbd.550769

Öz

Semiconductor ZnO thin films were deposited via chemical bath deposition technique (CBD) on glass substrates at varying temperatures (75°C-90°C). Influence of bath temperature on c-axis preferred orientations of ZnO thin films were examined. X-ray diffraction (XRD) results proved that thin films deposited at 80°C and 85°C bath temperature have a preferred orientation towards (011) peak. The preferred orientation changed towards (010) peak when the bath temperature increased to 90°C. Field Emission Scanning Electron Microscope (FESEM) images proved that ZnO thin film structure was formed by flower-like nanorods. In the thin films produced at 80°C and 85°C, the alignment of the nanorods was vertical, while in the films produced at 90°C, the nanorods mostly formed horizontally. These FESEM images also proved that the preferential orientation has changed from (011) to (010). Effects of bath temperature on band gap of semiconductor ZnO thin films were investigated by UV-Visible Spectrophotometer. ZnO thin films band gap value increased to 3.37 eV as the bath temperature increased to 85°C. When the bath temperature increased to 90°C the band gap value strongly decreased to 3.24 eV.

Anahtar Kelimeler

ZnO thin films chemical bath deposition Bath Temperature Effect Preferred Orientations Band Gap

Kaynakça

  • [1] Thiemann S., Gruber M., Lokteva I., Hirschmann J., Halik M. and Zaumseil J., “High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating,” J. ACS Appl. Mater. Interfaces, vol. 5, pp. 1656-1662, 2013.
  • [2] Zhang X., Qin J., Xue Y., Yu P., Zhang B., Wang L. and Liu R., “Effect of aspect ratio and surface defects on the photocatalytic activity of ZnO nanorods,” Sci.Rep., vol. 4, pp. 4596, 2014.
  • [3] Pourshaban E., Abdizadeh H. and Golobostanfard M.R., “A close correlation between nucleation sites, growth and final properties of ZnO nanorod arrays: Sol-gel assisted chemical bath deposition process” Ceram. Int., vol. 42, pp. 14721-14729, 2016.
  • [4] Wang Z.L., “Nanostructures of zinc oxide,” Mater. Today, vol. 7, pp. 26-33, 2004.
  • [5] Jiménez-Garcia F.N., “Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method,” Bull. Mater. Sci., vol. 37, pp. 1283-1291, 2014.
  • [6] Chen S. and Wang S., “ZnO:H indium-free transparent conductive electrodes for active-matrix display applications,” Appl. Phys. Lett., Vol. 105, pp. 223304, 2014.
  • [7] Lu Y.F., Ni H.Q., Z. Mai H., and Ren Z.M., “The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition,” J. Appl. Phys., vol. 88, pp. 498, 2010.
  • [8] Kim T.H., Park J.J., Nam S.H., Park H.S., Cheong N.R., Song J.R. and Park S.M., “Fabrication of Mg-doped ZnO thin films by laser ablation of Zn: Mg target,” Applied Surface Science, vol. 255, pp. 5264-5266, 2012.
  • [9] Tsay C.Y., Fan K.S., and Lei C.M., “Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films,” Journal of Alloys and Compounds, vol. 512, pp. 216-222, 2012.
  • [10] Zhao Y., Jiang D., Liu R., Duan Q., Tian C., Sun L., Gao S., Qin J., Liang Q. and Zhao J., “Surface treatment to improve responsivity of MgZnO UV detectors,” Solid. State. Electron., vol. 111, pp. 223-226, 2015.
  • [11] Yazawa M., Koguchi M., Muto A., Ozawa M. and Hiruma K., “Effect of one monolayer surface gold atoms on the epitaxial growth of InAs nanowhiskers,” Appl. Phys. Lett., vol. 61, pp. 2051-2053, 1992.
  • [12] Shaikh S.K, Inamdar S.I., Ganbavle V.V and Rajpure K.Y., “Chemical bath deposited ZnO thin film based UV photoconductive detector,” J. Alloys Compd., vol. 664, pp. 242-249, 2016.
  • [13] Kumar Y., Rana A.K., Bhojane P., Pusty M., Bagwe V., Sen S. and Shirage P.M., “Controlling of ZnO nanostructures by solute concentration and its effect on growth, structural and optical properties,” Mater. Res. Express, vol. 2, pp. 105017, 2015.
  • [14] Tauc j., Amorphous and liquid semiconductors New York: Plenum, 1976.

Bath Temperature Effect on c-axis Preferred Orientations and Band Gap of Semiconductor ZnO Thin Films

Yıl 2019, Cilt: 6 Sayı: 1, 24 - 28, 28.06.2019

Sinan Temel

https://doi.org/10.35193/bseufbd.550769

Öz

Semiconductor ZnO thin films were deposited via chemical bath deposition technique (CBD) on glass substrates at varying temperatures (75°C-90°C). Influence of bath temperature on c-axis preferred orientations of ZnO thin films were examined. X-ray diffraction (XRD) results proved that thin films deposited at 80°C and 85°C bath temperature have a preferred orientation towards (011) peak. The preferred orientation changed towards (010) peak when the bath temperature increased to 90°C. Field Emission Scanning Electron Microscope (FESEM) images proved that ZnO thin film structure was formed by flower-like nanorods. In the thin films produced at 80°C and 85°C, the alignment of the nanorods was vertical, while in the films produced at 90°C, the nanorods mostly formed horizontally. These FESEM images also proved that the preferential orientation has changed from (011) to (010). Effects of bath temperature on band gap of semiconductor ZnO thin films were investigated by UV-Visible Spectrophotometer. ZnO thin films band gap value increased to 3.37 eV as the bath temperature increased to 85°C. When the bath temperature increased to 90°C the band gap value strongly decreased to 3.24 eV.

Anahtar Kelimeler

Zno Thin Films Chemical Bath Deposition Bath Temperature Effect Preferred Orientations Band Gap

Kaynakça

  • [1] Thiemann S., Gruber M., Lokteva I., Hirschmann J., Halik M. and Zaumseil J., “High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating,” J. ACS Appl. Mater. Interfaces, vol. 5, pp. 1656-1662, 2013.
  • [2] Zhang X., Qin J., Xue Y., Yu P., Zhang B., Wang L. and Liu R., “Effect of aspect ratio and surface defects on the photocatalytic activity of ZnO nanorods,” Sci.Rep., vol. 4, pp. 4596, 2014.
  • [3] Pourshaban E., Abdizadeh H. and Golobostanfard M.R., “A close correlation between nucleation sites, growth and final properties of ZnO nanorod arrays: Sol-gel assisted chemical bath deposition process” Ceram. Int., vol. 42, pp. 14721-14729, 2016.
  • [4] Wang Z.L., “Nanostructures of zinc oxide,” Mater. Today, vol. 7, pp. 26-33, 2004.
  • [5] Jiménez-Garcia F.N., “Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method,” Bull. Mater. Sci., vol. 37, pp. 1283-1291, 2014.
  • [6] Chen S. and Wang S., “ZnO:H indium-free transparent conductive electrodes for active-matrix display applications,” Appl. Phys. Lett., Vol. 105, pp. 223304, 2014.
  • [7] Lu Y.F., Ni H.Q., Z. Mai H., and Ren Z.M., “The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition,” J. Appl. Phys., vol. 88, pp. 498, 2010.
  • [8] Kim T.H., Park J.J., Nam S.H., Park H.S., Cheong N.R., Song J.R. and Park S.M., “Fabrication of Mg-doped ZnO thin films by laser ablation of Zn: Mg target,” Applied Surface Science, vol. 255, pp. 5264-5266, 2012.
  • [9] Tsay C.Y., Fan K.S., and Lei C.M., “Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films,” Journal of Alloys and Compounds, vol. 512, pp. 216-222, 2012.
  • [10] Zhao Y., Jiang D., Liu R., Duan Q., Tian C., Sun L., Gao S., Qin J., Liang Q. and Zhao J., “Surface treatment to improve responsivity of MgZnO UV detectors,” Solid. State. Electron., vol. 111, pp. 223-226, 2015.
  • [11] Yazawa M., Koguchi M., Muto A., Ozawa M. and Hiruma K., “Effect of one monolayer surface gold atoms on the epitaxial growth of InAs nanowhiskers,” Appl. Phys. Lett., vol. 61, pp. 2051-2053, 1992.
  • [12] Shaikh S.K, Inamdar S.I., Ganbavle V.V and Rajpure K.Y., “Chemical bath deposited ZnO thin film based UV photoconductive detector,” J. Alloys Compd., vol. 664, pp. 242-249, 2016.
  • [13] Kumar Y., Rana A.K., Bhojane P., Pusty M., Bagwe V., Sen S. and Shirage P.M., “Controlling of ZnO nanostructures by solute concentration and its effect on growth, structural and optical properties,” Mater. Res. Express, vol. 2, pp. 105017, 2015.
  • [14] Tauc j., Amorphous and liquid semiconductors New York: Plenum, 1976.
Toplam 14 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Makaleler
Yazarlar

Sinan Temel 0000-0002-0889-9490

Yayımlanma Tarihi 28 Haziran 2019
Gönderilme Tarihi 8 Nisan 2019
Kabul Tarihi 7 Mayıs 2019
Yayımlandığı Sayı Yıl 2019 Cilt: 6 Sayı: 1

Kaynak Göster

APA Temel, S. (2019). Bath Temperature Effect on c-axis Preferred Orientations and Band Gap of Semiconductor ZnO Thin Films. Bilecik Şeyh Edebali Üniversitesi Fen Bilimleri Dergisi, 6(1), 24-28. https://doi.org/10.35193/bseufbd.550769