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SURFACE MORPHOLOGY and GaSe:In BINARY SEMICONDUCTOR GROWN BY BRIDGMAN/STOCKBARGER TECHNIQUE

Year 2015, Issue: 2015 Özel Sayısı, 65 - 76, 15.01.2016

Abstract

The importance of semiconductors paving the way for
nano technology has recently been increased. But, producing them easily and
having their vast application fields are most important. For that reason, the
crystals having wide application field and their characteristics which are
fully determinated are needed. The main topic of this presentation is to grow
GaSe:In single crystals by Modified Bridgman/Stockbarger method and to
investiage their structural properties. GaSe:In binary semiconductor compound
was grown in our crystal growth laboratory by the modified Bridgman-Stockbarger
method. The structural and morphological characterizations of the samples were
carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and
Energy-dispersive X-ray spectroscopy(EDX) techniques. The XRD results indicated
that the grown films had hexzagonal structure and In doping increased the peak
intensities. The lattice parameters were calculated to be a=b=3,749 (Å),  c=15,944 (Å) for InSe using the XRD
results.The calculated lattice constants was found to be a=b=3,749 Å and
c=15,944 Å for InSe using the XRD results. The crystallite size (3,986 Å),
residual strain (6,55x10-4 lin-2 m-4) and dislocation density (4,8830x1014lin
m-2) and number of crystallites per unit area (3,23x1017m-2) values have been
calculated using powder XRD results (004). From the SEM results, it was
observed that the average grain size values for GaSe:In was between
41,746-89,365 nm.

References

  • [1] C. De Blasi, D. Manno, G. Micocci ve A. Tepore, “Optical absorption and structure of thermally annealed gallium selenide thin films”, Fiz.Tekh. Poluprovodn, 23, 505-507 (1989).
  • [12] M.M. Abdullah, G. Bhagavannarrayana ve M.A. Wahab, “Controlled synthesis and structural characterization of pollycrystalline GaSe”, J. Mater Science, 45, 4088-4092 (2010).
  • [3] U. Schwarz, D. Olguin, A. Cantarero, M. Hanfland ve K. Syassen, “Effect of pressure on the structural properties and electronic band structure of GaSe”, Phys. Stat. Sol. (B), 244(1), 244–255 (2007).
  • [4] B. Gürbulak, M. Yıldırım, H. Efeoğlu, S. Tüzemen ve Y.K. Yoğurtçu, “Temperature Dependence of Galvanomagnetic Properties for Gd Doped and Undoped p-Type GaSe”, J. Appl. Phys, 83 (4), 2030 (1998).
  • [5] M. Parlak, A.F. Qasrawi ve Ç. Erçelebi, “Growth, electrical and structural characterization of β-GaSe thin films”, Journal of Materials Science 38, 1507-1511 (2003).
  • [6] I. Shih, C. H. Champness ve A.V. Shahidi, “Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material”, Solar Cells, 16(1-4), 27-41 (1986).
  • [7] T. Irie, S. Endo ve S. Kimura, “Electrical-Properties of p-type and n-type CuInSe2 Single-Crystals”, Japanese Journal of Applied Physics 18 (7), 1303-1310 (1979).
  • [8] G.B. Williamson ve R.C. Smallman “III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum”, Philosophical Magazine, 1(1), 34-36 (1956).
  • [9] Z. Strnad, “Glass-Ceramic Materials”, Glass Science and Technology, 8, 161 (1986).
  • [10] S.M. Souza, C.E.M. Campos, J.C. de Lima, T.A. Grandi ve P.S. Pizani, “Structural, thermal and optical studies of mechanical alloyed Ga40Se60 mixture”, Solid State Communications 139, 70-75 (2006).
  • [11] C. H. Ho, C.C. Wu ve Z.H. Cheng, “Crystal structure and electronic structure of GaSe1-xSx series layered solids”, Journal of Crystal Growth, 279, 321–328 (2005).
  • [12] W.C. Huang, S. Hsiang, Y.K. Hsu, C.C. Wang ve C.S. “Chang, Al Schottky contact on p-GaSe, Süperlattices and Microstructures”, 40, 644-650 (2006).
  • [13] O. Yutaka, T. Tadao, S. Fumikazu, K. Atsushi, N. Jun-ichi, S. Tetsuo ve S. Ken, “Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation”, Journal of Crystal Growth, 310, 1923–1928 (2008).
  • [14] D.H. Mosca, N. Mattoso, C.M. Lepienski, W. Veiga, I. Mazzaro, V.H. Etgens ve M. Eddrief, “Mechanical properties of layered InSe and GaSe single crystals”, Journal of Applied Physıcs, 91 (1), 140-144 (2002).

GaSe:In İKİLİ BİLEŞİĞİNİN MODİFİYE BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ VE YÜZEY MORFOLOJİSİ

Year 2015, Issue: 2015 Özel Sayısı, 65 - 76, 15.01.2016

Abstract

Nano teknolojinin ilerlemesinde yarıiletkenlerin önemi
giderek artmaktadır. Ancak, kullanılacak yarıiletkenlerin
hem kolay elde edilebilir hem de uygulama alanının geniş olması daha da
önem arz etmektedir. Bu maksatla, uygulama alanları çok olan ve
karakteristikleri tam olarak belirlenen yarıiletkenlere ihtiyaç duyulmaktadır.
Güneş enerjisinin depolanması ve kullanılmasında çalışılan başlıca malzemeler
arasında yarıiletkenler yer almaktadır. Sunumun temel konusu, GaSe:In
yarıiletken bileşiğini Bridgman/Stockbarger Metoduyla büyütmek, büyütülen
GaSe:In yarıiletkenin yapısal özelliklerini incelemektir. GaSe:In yarıiletken
bileşiği, Bridgman/Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal
ve morfolojik karakterizasyonları X-ışını kırınımı (XRD), taramalı elektron
mikroskobu (SEM) ve enerji ayrımlı X-ışını spektroskopisi (EDX) teknikleri
kullanılarak gerçekleştirilmiştir.
XRD
sonuçları, büyütülen numunelerin hekzagonal kristal yapıya sahip olduklarını ve
In katkılamanın pik şiddetlerini arttırdığını gösterdi. XRD sonuçları
kullanılarak,
örgü 
parametreleri GaSe:In için a=b=3,749 (Å), c=15,944 (Å) olarak
hesaplanmıştır.
XRD sonuçlarından (004),
kristal büyüklüğü (3,986
Å), zorlanma derecesi (6,55x10-4 lin-2m-4)
and dislokasyon yoğunluğu (4,8830x1014 lin m-2) and
birim alan başına kristal
sayısı
(3,23x1017m-2)
değerleri hesaplanmıştır.
SEM sonuçlarından, ortalama
tanecik büyüklüğünün GaSe:In için 41,746-89,365 nm aralığında olduğu
gözlenmiştir.

References

  • [1] C. De Blasi, D. Manno, G. Micocci ve A. Tepore, “Optical absorption and structure of thermally annealed gallium selenide thin films”, Fiz.Tekh. Poluprovodn, 23, 505-507 (1989).
  • [12] M.M. Abdullah, G. Bhagavannarrayana ve M.A. Wahab, “Controlled synthesis and structural characterization of pollycrystalline GaSe”, J. Mater Science, 45, 4088-4092 (2010).
  • [3] U. Schwarz, D. Olguin, A. Cantarero, M. Hanfland ve K. Syassen, “Effect of pressure on the structural properties and electronic band structure of GaSe”, Phys. Stat. Sol. (B), 244(1), 244–255 (2007).
  • [4] B. Gürbulak, M. Yıldırım, H. Efeoğlu, S. Tüzemen ve Y.K. Yoğurtçu, “Temperature Dependence of Galvanomagnetic Properties for Gd Doped and Undoped p-Type GaSe”, J. Appl. Phys, 83 (4), 2030 (1998).
  • [5] M. Parlak, A.F. Qasrawi ve Ç. Erçelebi, “Growth, electrical and structural characterization of β-GaSe thin films”, Journal of Materials Science 38, 1507-1511 (2003).
  • [6] I. Shih, C. H. Champness ve A.V. Shahidi, “Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material”, Solar Cells, 16(1-4), 27-41 (1986).
  • [7] T. Irie, S. Endo ve S. Kimura, “Electrical-Properties of p-type and n-type CuInSe2 Single-Crystals”, Japanese Journal of Applied Physics 18 (7), 1303-1310 (1979).
  • [8] G.B. Williamson ve R.C. Smallman “III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum”, Philosophical Magazine, 1(1), 34-36 (1956).
  • [9] Z. Strnad, “Glass-Ceramic Materials”, Glass Science and Technology, 8, 161 (1986).
  • [10] S.M. Souza, C.E.M. Campos, J.C. de Lima, T.A. Grandi ve P.S. Pizani, “Structural, thermal and optical studies of mechanical alloyed Ga40Se60 mixture”, Solid State Communications 139, 70-75 (2006).
  • [11] C. H. Ho, C.C. Wu ve Z.H. Cheng, “Crystal structure and electronic structure of GaSe1-xSx series layered solids”, Journal of Crystal Growth, 279, 321–328 (2005).
  • [12] W.C. Huang, S. Hsiang, Y.K. Hsu, C.C. Wang ve C.S. “Chang, Al Schottky contact on p-GaSe, Süperlattices and Microstructures”, 40, 644-650 (2006).
  • [13] O. Yutaka, T. Tadao, S. Fumikazu, K. Atsushi, N. Jun-ichi, S. Tetsuo ve S. Ken, “Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation”, Journal of Crystal Growth, 310, 1923–1928 (2008).
  • [14] D.H. Mosca, N. Mattoso, C.M. Lepienski, W. Veiga, I. Mazzaro, V.H. Etgens ve M. Eddrief, “Mechanical properties of layered InSe and GaSe single crystals”, Journal of Applied Physıcs, 91 (1), 140-144 (2002).
There are 14 citations in total.

Details

Primary Language Turkish
Subjects Metrology, Applied and Industrial Physics
Journal Section Articles
Authors

Bekir Gürbulak

Mehmet Şata This is me

Songül Duman This is me

Salih Zeki Erzenoğlu This is me

Afsoun Ashkhası This is me

Yasin Öztırpan This is me

Burcu Akça This is me

Publication Date January 15, 2016
Published in Issue Year 2015 Issue: 2015 Özel Sayısı

Cite

APA Gürbulak, B., Şata, M., Duman, S., Erzenoğlu, S. Z., et al. (2016). GaSe:In İKİLİ BİLEŞİĞİNİN MODİFİYE BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ VE YÜZEY MORFOLOJİSİ. Journal of Science and Technology of Dumlupınar University(2015 Özel Sayısı), 65-76.

HAZİRAN 2020'den itibaren Journal of Scientific Reports-A adı altında ingilizce olarak yayın hayatına devam edecektir.