DC~1.6 GHZ GaAS MESFET’LERE SAHİP DAĞILMIŞ PARAMETRELİ KUVVETLENDİRİCİ

Yıl 2016, Cilt: 21 Sayı: 2, 159 - 170, 13.10.2016

Bahadır Hiçdurmaz Cengiz Özzaim

https://doi.org/10.17482/uujfe.81252

Öz

Bu çalışmada, DC ~ 1.6 GHz bant genişliğine sahip bir dağılmış parametreli kuvvetlendirici (DA) baskı devre kartında gerçeklenmiştir. Dağılmış parametreli kuvvetlendiricinin performans parametreleri olan saçınım (S-) parametreleri ölçülmüş ve sonuçlar benzetim sonuçlarıyla kıyaslanmıştır. Yükselticinin karakterizasyonunda, devrenin aktif elemanları olan transistörlerin bazı frekanslarda verilmiş küçük-işaret mikrodalga S-parametreleri ve pasif elemanların değerleri kullanılmıştır. Elde edilen sonuçlara göre, ölçülen ve benzetilen sonuçlar nispeten uyumludur.

Anahtar Kelimeler

Dağılmış parametreli kuvvetlendirici, Genişbant; S-parametreleri; PCB gerçekleme

A DC~1.6 Ghz Distributed Amplifier with GaAs MESFETs

Öz

In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S-parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.

Anahtar Kelimeler

Distributed amplifier, broadband; S-parameters; PCB fabrication

Kaynakça

• Ayaslı, Y., Mozzi, R.L., Vorhaus, J.L., Reynolds, L.D. and Pucel, R.A. (1982). A monolithic GaAs 1-13 GHz traveling-wave amplifier, IEEE Transactions on Microwave Theory and Techniques, 30, 976-981. doi: 10.1109/TMTT.1982.1131186
• Jutzi, W. (1969). A MESFET distributed amplifier with 2 GHz bandwidth. Proceedings IEEE Letters, 57, 1195-1196. doi: 10.1109/PROC.1969.7188
• Agarwal, B., Schmitz, A.E., Brown, J.J., Matloubian, M., Case, M.G., Le, M., Lui, M. and Rodwell, M.J.W. (1998). 112 GHz, 157 GHz, and 180 GHz InP HEMT traveling-wave amplifiers, IEEE Transactions on Microwave Theory and Techniques, 46, 2553-2559. doi: 10.1109/22.739247
• Ericksson, K., Darwazeh, I. and Zirath, H. (2015). InP DHBT distributed amplifiers with up to 235-GHz bandwidth, IEEE Transactions on Microwave Theory and Techniques, 63, 1334-1341. doi: 10.1109/MWSYM.2014.6848436
• Narendra, K., Limiti, E. and Paoloni, C. (2013). Dual fed distributed amplifier with controlled termination adjustment, Progress in Electromagnetics Research, 139, 761–777. doi: 10.2528/PIER13031914
• Levy, D., Noblet, A. and Bender, Y. (1986). A 2-18 GHz traveling lossless two-port combiner, IEEE MTT-S International Microwave Symposium Digest, 503-506. doi: 10.1109/MWSYM.1986.1132232
• Leisten, O.P. and Collier, R.J. (1988). Distributed amplifiers as dublexer/low crosstalk bidirectional elements in S-band, Electronics Letters, 24, 264-265. doi: 10.1049/el:19880176
• Pavio, A.M., Bingham, S.D., Halladay, R.H. and Sapashe, C.A. (1988). A distributed broadband monolithic frequency multiplier, IEEE MTT-S International Microwave Symposium Digest, 503-504. doi: 10.1109/MWSYM.1988.22084
• Tang, O.S.A. and Aitchison, C.S. (1985). A very wideband microwave MESFET mixer using the distributed mixing principle. IEEE Transactions on Microwave Theory and Techniques, 33, 1470-1478. doi: 10.1109/TMTT.1985.1133242
• Cioffi, K.R. (1989). Broad-band distributed amplifier impedance-matching techniques, IEEE Transactions on Microwave Theory and Techniques, 37, 1870-1876. doi: 10.1109/22.44096
• Skvor, Z., Saunders, S.R. and Aitchison, C.S. (1992). Novel decade electronically tunable microwave oscillator based on the distributed amplifier, Electronics Letters, 28, 1647-1648. doi: 10.1049/el:19921048
• Aitchison C.S., (1985). The intrinsic noise figure of the MESFET distributed amplifier, IEEE Transactions on Microwave Theory and Techniques, 33, 460-466. doi: 10.1109/TMTT.1985.1133100
• Beyer, J.B., Prasad, S.N., Becker, R.C., Normdan, J.E. and Hohenwarter, G.K. (1984). Mesfet distributed amplifier design guidelines, IEEE Transactions on Microwave Theory and Techniques, 32, 268-275. doi: 10.1109/TMTT.1984.1132664
• Niclas, K.B., Wilser, W.T., Kritzer, T.R. and Pereira, R.R., (1983). On theory and performance of solid-state microwave distributed amplifiers, IEEE Transactions on Microwave Theory and Techniques, 31, 447-456. doi: 10.1109/TMTT.1983.1131524
• Niclas, K.B., Pereira, R.R., and Chang, A.P., (1983). A 2-18 GHz low-noise/high-gain amplifier module, IEEE Transactions on Microwave Theory and Techniques, 37, 198-207. doi: 10.1109/22.20039
• Strid, E.W. and Gleason, K.R., (1982). A DC-12 GHz monolithic GaAs distributed amplifier, IEEE Transactions on Microwave Theory and Techniques, 30, 969-975. doi: 10.1109/T-ED.1982.20835
• Hiçdurmaz, B., Özzaim, C. (2011). Dağılmış parametreli kuvvetlendiricinin bilgisayar destekli tasarımı, Uludağ Üniversitesi Mühendislik-Mimarlık Fakültesi Dergisi, 16, 55-64.
• Kumar, N., Grebennikov, A. (2015). Distributed Power Amplifiers for RF and Microwave Communications, Artech House, Boston, London.
• Pozar, D.M., (2012). Microwave Engineering, John Wiley&Sons, Inc.
• Virdee, B.S., Virdee, A.S. and Banyamin, B.Y., (2004). Broadband Microwave Amplifiers, Artech House, Boston, London.
• Berroth, M. and Bosch, R., (1990). Broad-band determination of the FET small signal equivalent circuit, IEEE Transactions on Microwave Theory and Techniques, 38, 891-895. doi: 10.1109/22.55781
• Kondoh, H., (1986). An accurate FET modeling from measured S-parameters, IEEE MTT-S International Microwave Symposium Digest, 377-380. doi: 10.1109/MWSYM.1986.1132197
• Gonzalez, G., (1997). Microwave Transistor Amplifiers, Prentice Hall Upper Saddle River, New Jersey.