Year 2017,
Volume: 18 Issue: 3, 624 - 631, 30.09.2017
Uğur Serincan
,
Mehmet Erkuş
Onur Şenel
References
- Bergman L, McHale JL. Handbook of luminescent semiconductor materials. 1st ed. New York, CRC Press, 2011. pp.194.
- Rogalski A. History of infrared detectors. Opto−Electronics Review 2012; 20: 279–308.
- Downs C, Vandervelde TE. Progress in infrared photodetectors since 2000. Sensors (Basel) 2013; 13: 5054–5098.
- Martyniuk P, Kopytko M, and Rogalski A. Barrier infrared detectors. Opto−Electronics Review 2014; 22: 127–146.
- Gordon NT, Baker IM. Infrared detectors and emitters: materials and devices. 1st ed. United Kingdom: Springer, 2001. pp. 40.
- Yildirim A, Prineas JP. Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials J Vac Sci Technol B 2012; 30: 02B104-1-7.
- Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Tech L 2012; 24: 218-220.
- Wang CA, Choi HK, Oakley DC, Charache GW. Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy. J Cryst Growth 1998; 195, 346-355.
- Lei L, Li L, Lotfi H, Jiang Y, Yang RQ, Johnson MB, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK. Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers. Semicond Sci Technol 2016; 31: 105014-1-7.
- Reddy MHM, Olesberg JT, Cao C, Prineas JP. MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination. Semicond. Sci Technol 2006; 21: 267–272.
- Bracker AS, Yang MJ, Bennett BR, Culbertson JC, Moore WJ. Surface reconstruction phase diagrams for InAs, AlSb and GaSb. J Cryst Growth 2000; 220: 384–392.
- Erkus M, Senel O and Serincan U. Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate. Thin Solid Films 2016; 616: 141–144.
- Deng HY, Hong XK, Fang WZ, Dai N. Microstructure characterization of InAs0.93Sb0.07 films grown by ramp-cooled liquid phase epitaxy. Mater Charact 2007; 58: 307-311.
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- Rogalski A. HgCdTe infrared detector material: history, status and outlook. Rep Prog Phys 2005, 68, 2267–2336.
- Varshni YP. Temperature dependence of the energy gap in semiconductors. Physica 1967; 34: 149-154.
UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE
Year 2017,
Volume: 18 Issue: 3, 624 - 631, 30.09.2017
Uğur Serincan
,
Mehmet Erkuş
Onur Şenel
Abstract
Ga0.87In0.13As0.4Sb0.96
photodiode structure was grown on semi-insulating 4” GaAs substrate by
molecular beam epitaxy. The composition, crystal quality and dislocation
density of epilayers were determined by high resolution X-ray diffraction rocking curve measurements. The threading dislocation density of the
photodetector structure was calculated from the rotational broadening as ~2.5x108
cm-2. The cutoff wavelength and the peak responsivity of the
photodetector were determined as around 2.15 μm and 0.08 A/W at 300 K,
respectively. By applying reverse bias (-100 mV) the responsivity value of the
photodetector increases more than an order (~0.96 A/W) which is the best value
reported up to now. Those results indicate that although there is a large lattice
mismatch (~8.4%) between GaAs substrate and the photodetector structure, an acceptable
photodetector performance was achieved which is important for reducing photodetector
costs.
References
- Bergman L, McHale JL. Handbook of luminescent semiconductor materials. 1st ed. New York, CRC Press, 2011. pp.194.
- Rogalski A. History of infrared detectors. Opto−Electronics Review 2012; 20: 279–308.
- Downs C, Vandervelde TE. Progress in infrared photodetectors since 2000. Sensors (Basel) 2013; 13: 5054–5098.
- Martyniuk P, Kopytko M, and Rogalski A. Barrier infrared detectors. Opto−Electronics Review 2014; 22: 127–146.
- Gordon NT, Baker IM. Infrared detectors and emitters: materials and devices. 1st ed. United Kingdom: Springer, 2001. pp. 40.
- Yildirim A, Prineas JP. Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials J Vac Sci Technol B 2012; 30: 02B104-1-7.
- Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Tech L 2012; 24: 218-220.
- Wang CA, Choi HK, Oakley DC, Charache GW. Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy. J Cryst Growth 1998; 195, 346-355.
- Lei L, Li L, Lotfi H, Jiang Y, Yang RQ, Johnson MB, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK. Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers. Semicond Sci Technol 2016; 31: 105014-1-7.
- Reddy MHM, Olesberg JT, Cao C, Prineas JP. MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination. Semicond. Sci Technol 2006; 21: 267–272.
- Bracker AS, Yang MJ, Bennett BR, Culbertson JC, Moore WJ. Surface reconstruction phase diagrams for InAs, AlSb and GaSb. J Cryst Growth 2000; 220: 384–392.
- Erkus M, Senel O and Serincan U. Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate. Thin Solid Films 2016; 616: 141–144.
- Deng HY, Hong XK, Fang WZ, Dai N. Microstructure characterization of InAs0.93Sb0.07 films grown by ramp-cooled liquid phase epitaxy. Mater Charact 2007; 58: 307-311.
- Ayers JE. The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction. J Cryst Growth 1994; 135: 71-77.
- Wang G, Loo R, Simoen E, Souriau L, Caymax M, Heyns MM, Blanpain B. A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100). Appl Phys Lett 2009; 94: 102115-1-3.
- Rogalski A. HgCdTe infrared detector material: history, status and outlook. Rep Prog Phys 2005, 68, 2267–2336.
- Varshni YP. Temperature dependence of the energy gap in semiconductors. Physica 1967; 34: 149-154.