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Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Year 1987, , - , 01.01.1987

Tülay Serin

https://doi.org/10.1501/commua1-2_0000000062
Cited By: 1

Abstract

In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H (n- type) / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes (area 7.85xl0“3 cm2) were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.

Keywords

TECHNIÇUE DIODES SCHOTTKY

References

  • Communications, Series A2-A3: Physical Sciences and Engineering

Year 1987, , - , 01.01.1987

Tülay Serin

https://doi.org/10.1501/commua1-2_0000000062
Cited By: 1

Abstract

References

  • Communications, Series A2-A3: Physical Sciences and Engineering
There are 1 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Articles
Authors

Tülay Serin This is me

Publication Date January 1, 1987
Submission Date January 1, 1987
Published in Issue Year 1987

Cite

APA Serin, T. (1987). Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 36. https://doi.org/10.1501/commua1-2_0000000062
AMA Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. January 1987;36. doi:10.1501/commua1-2_0000000062
Chicago Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36, January (January 1987). https://doi.org/10.1501/commua1-2_0000000062.
EndNote Serin T (January 1, 1987) Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36
IEEE T. Serin, “Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 36, 1987, doi: 10.1501/commua1-2_0000000062.
ISNAD Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36 (January 1987). https://doi.org/10.1501/commua1-2_0000000062.
JAMA Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36. doi:10.1501/commua1-2_0000000062.
MLA Serin, Tülay. “Ag / A-Si:H (n-Type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 36, 1987, doi:10.1501/commua1-2_0000000062.
Vancouver Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36.

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Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering

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