Research Article

Operation of bipolar and field effect transistors in radiation environments

Volume: 43 January 1, 1994
  • Fouad A.s Soliman
Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering Cover
Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering
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Operation of bipolar and field effect transistors in radiation environments

Abstract

An investigation of radiation damage in bipolar and field effect transistors is presented. For low frequency transistors, 90 % of the damage in forward current gain occurs at k>w y doses around 100 K. rads. On the other hand, tlıe effects on microwave transistors occur at lıigher- dosc levels up to 100 x 106 rads. The damage effect has minimum that usually corresponds to the low (0.10 mA.) and higher (300 mA) ends of the operating collector current range of a device.

Keywords

References

  1. Ankara Üniversitesi- Ankara Üniversitesi Communications, Series A2-A3: Physical Sciences and Enginering Dergisi

Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Authors

Fouad A.s Soliman This is me
Türkiye

Publication Date

January 1, 1994

Submission Date

January 1, 1994

Acceptance Date

-

Published in Issue

Year 1994 Volume: 43

DOI

https://doi.org/10.1501/commua1-2_0000000049

IZ

https://izlik.org/JA32KL46DP

Cite

RIS / Bibtex
APA
Soliman, F. A. (1994). Operation of bipolar and field effect transistors in radiation environments. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 43, 9-23. https://doi.org/10.1501/commua1-2_0000000049
AMA
1.Soliman FA. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1994;43:9-23. doi:10.1501/commua1-2_0000000049
Chicago
Soliman, Fouad A.s. 1994. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43 (January): 9-23. https://doi.org/10.1501/commua1-2_0000000049.
EndNote
Soliman FA (January 1, 1994) Operation of bipolar and field effect transistors in radiation environments. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43 9–23.
IEEE
[1]F. A. Soliman, “Operation of bipolar and field effect transistors in radiation environments”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 43, pp. 9–23, Jan. 1994, doi: 10.1501/commua1-2_0000000049.
ISNAD
Soliman, Fouad A.s. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43 (January 1, 1994): 9-23. https://doi.org/10.1501/commua1-2_0000000049.
JAMA
1.Soliman FA. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1994;43:9–23.
MLA
Soliman, Fouad A.s. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 43, Jan. 1994, pp. 9-23, doi:10.1501/commua1-2_0000000049.
Vancouver
1.Fouad A.s Soliman. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1994 Jan. 1;43:9-23. doi:10.1501/commua1-2_0000000049

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