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Year 1994, , 9 - 23, 01.01.1994

Fouad A.s Soliman

https://doi.org/10.1501/commua1-2_0000000049

Abstract

References

  • Ankara Üniversitesi- Ankara Üniversitesi Communications, Series A2-A3: Physical Sciences and Enginering Dergisi

Operation of bipolar and field effect transistors in radiation environments

Year 1994, , 9 - 23, 01.01.1994

Fouad A.s Soliman

https://doi.org/10.1501/commua1-2_0000000049

Abstract

An investigation of radiation damage in bipolar and field effect transistors is presented.
For low frequency transistors, 90 % of the damage in forward current gain occurs at k>w y doses around 100 K. rads. On the other hand, tlıe effects on microwave transistors occur at lıigher- dosc levels up to 100 x 106 rads. The damage effect has minimum that usually corresponds to the low (0.10 mA.) and higher (300 mA) ends of the operating collector current range of a device.

Keywords

Operation Bipolar Radiation environments

References

  • Ankara Üniversitesi- Ankara Üniversitesi Communications, Series A2-A3: Physical Sciences and Enginering Dergisi
There are 1 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Articles
Authors

Fouad A.s Soliman This is me

Publication Date January 1, 1994
Submission Date January 1, 1994
Published in Issue Year 1994

Cite

APA Soliman, F. A. (1994). Operation of bipolar and field effect transistors in radiation environments. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 43, 9-23. https://doi.org/10.1501/commua1-2_0000000049
AMA Soliman FA. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. January 1994;43:9-23. doi:10.1501/commua1-2_0000000049
Chicago Soliman, Fouad A.s. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43, January (January 1994): 9-23. https://doi.org/10.1501/commua1-2_0000000049.
EndNote Soliman FA (January 1, 1994) Operation of bipolar and field effect transistors in radiation environments. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43 9–23.
IEEE F. A. Soliman, “Operation of bipolar and field effect transistors in radiation environments”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 43, pp. 9–23, 1994, doi: 10.1501/commua1-2_0000000049.
ISNAD Soliman, Fouad A.s. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 43 (January 1994), 9-23. https://doi.org/10.1501/commua1-2_0000000049.
JAMA Soliman FA. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1994;43:9–23.
MLA Soliman, Fouad A.s. “Operation of Bipolar and Field Effect Transistors in Radiation Environments”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 43, 1994, pp. 9-23, doi:10.1501/commua1-2_0000000049.
Vancouver Soliman FA. Operation of bipolar and field effect transistors in radiation environments. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1994;43:9-23.

Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering

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