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The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure

Year 1988, , - , 01.01.1988
https://doi.org/10.1501/commua1-2_0000000072

Abstract

We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.

References

  • Communications, Series A2-A3: Physical Sciences and Engineering
Year 1988, , - , 01.01.1988
https://doi.org/10.1501/commua1-2_0000000072

Abstract

References

  • Communications, Series A2-A3: Physical Sciences and Engineering
There are 1 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Articles
Authors

Tülay Serin This is me

Publication Date January 1, 1988
Submission Date January 1, 1988
Published in Issue Year 1988

Cite

APA Serin, T. (1988). The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 37. https://doi.org/10.1501/commua1-2_0000000072
AMA Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. January 1988;37. doi:10.1501/commua1-2_0000000072
Chicago Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37, January (January 1988). https://doi.org/10.1501/commua1-2_0000000072.
EndNote Serin T (January 1, 1988) The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37
IEEE T. Serin, “The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 37, 1988, doi: 10.1501/commua1-2_0000000072.
ISNAD Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37 (January 1988). https://doi.org/10.1501/commua1-2_0000000072.
JAMA Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37. doi:10.1501/commua1-2_0000000072.
MLA Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au/Ge/Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 37, 1988, doi:10.1501/commua1-2_0000000072.
Vancouver Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37.

Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering

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