The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure
Abstract
We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.
Keywords
References
- Communications, Series A2-A3: Physical Sciences and Engineering
Abstract
References
- Communications, Series A2-A3: Physical Sciences and Engineering
Details
| Primary Language | English |
|---|---|
| Subjects | Engineering |
| Journal Section | Research Article |
| Authors | |
| Submission Date | January 1, 1988 |
| Publication Date | January 1, 1988 |
| DOI | https://doi.org/10.1501/commua1-2_0000000072 |
| IZ | https://izlik.org/JA33ZG99WZ |
| Published in Issue | Year 1988 Volume: 37 |
Cite
Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering licensed under a Creative Commons Attribution 4.0 International License.
