The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure

Tülay Serin

doi:10.1501/commua1-2_0000000072

EN

The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure

Abstract

We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.

Keywords

References

Communications, Series A2-A3: Physical Sciences and Engineering

Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Authors

Tülay Serin This is me
Türkiye

Publication Date

January 1, 1988

Submission Date

January 1, 1988

Acceptance Date

-

Published in Issue

Year 1988 Volume: 37

DOI

https://doi.org/10.1501/commua1-2_0000000072

IZ

https://izlik.org/JA33ZG99WZ

Cite

RIS / Bibtex

APA

Serin, T. (1988). The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 37. https://doi.org/10.1501/commua1-2_0000000072

AMA

1.Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37. doi:10.1501/commua1-2_0000000072

Chicago

Serin, Tülay. 1988. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au Ge Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37 (January). https://doi.org/10.1501/commua1-2_0000000072.

EndNote

Serin T (January 1, 1988) The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37

IEEE

[1]T. Serin, “The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 37, Jan. 1988, doi: 10.1501/commua1-2_0000000072.

ISNAD

Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au Ge Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 37 (January 1, 1988). https://doi.org/10.1501/commua1-2_0000000072.

JAMA

1.Serin T. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988;37. doi:10.1501/commua1-2_0000000072.

MLA

Serin, Tülay. “The Determination of Minority Carrier Diffusion Coefficient from the C-V Characteristics of the Au Ge Sn Structure”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 37, Jan. 1988, doi:10.1501/commua1-2_0000000072.

Vancouver

1.Tülay Serin. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1988 Jan. 1;37. doi:10.1501/commua1-2_0000000072