Abstract
In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H (n- type) / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes (area 7.85xl0“3 cm2) were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.
References
- Communications, Series A2-A3: Physical Sciences and Engineering
Abstract
References
- Communications, Series A2-A3: Physical Sciences and Engineering
Details
| Primary Language | English |
|---|---|
| Subjects | Engineering |
| Journal Section | Research Articles |
| Authors | |
| Publication Date | January 1, 1987 |
| Submission Date | January 1, 1987 |
| Published in Issue | Year 1987 Volume: 36 |
Cite
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Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering
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