Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Tülay Serin

doi:10.1501/commua1-2_0000000062

EN

Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Abstract

In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H (n- type) / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes (area 7.85xl0“3 cm2) were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.

Keywords

References

Communications, Series A2-A3: Physical Sciences and Engineering

Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Authors

Tülay Serin This is me
Türkiye

Publication Date

January 1, 1987

Submission Date

January 1, 1987

Acceptance Date

-

Published in Issue

Year 1987 Volume: 36

DOI

https://doi.org/10.1501/commua1-2_0000000062

IZ

https://izlik.org/JA69FB78KS

Cite

RIS / Bibtex

APA

Serin, T. (1987). Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, 36. https://doi.org/10.1501/commua1-2_0000000062

AMA

1.Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36. doi:10.1501/commua1-2_0000000062

Chicago

Serin, Tülay. 1987. “Ag A-Si:H (n-Type) Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36 (January). https://doi.org/10.1501/commua1-2_0000000062.

EndNote

Serin T (January 1, 1987) Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36

IEEE

[1]T. Serin, “Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”, Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng., vol. 36, Jan. 1987, doi: 10.1501/commua1-2_0000000062.

ISNAD

Serin, Tülay. “Ag A-Si:H (n-Type) Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering 36 (January 1, 1987). https://doi.org/10.1501/commua1-2_0000000062.

JAMA

1.Serin T. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987;36. doi:10.1501/commua1-2_0000000062.

MLA

Serin, Tülay. “Ag A-Si:H (n-Type) Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE”. Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering, vol. 36, Jan. 1987, doi:10.1501/commua1-2_0000000062.

Vancouver

1.Tülay Serin. Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE. Commun.Fac.Sci.Univ.Ank.Series A2-A3: Phys.Sci. and Eng. 1987 Jan. 1;36. doi:10.1501/commua1-2_0000000062

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