A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Abstract

Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications.  The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures.

A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics.  The best fit characteristics were acquired using the Zha and Strukov models.

Keywords

• Memristor,1D1R,Resistive random access memory (RRAM),Circuit model

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