A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Year 2019, , 15 - 19, 31.01.2019

Fatih Gül

https://doi.org/10.17694/bajece.457395

Cited By: 1

Abstract

Memristor-based resistive random access
memory (RRAM) devices are very good competitors for next generation
non-volatile crossbar memory applications. 
The sneak paths problem is one of the main constraints in fabricating
crossbar memory devices. The one diode-one resistor (1D1R) structure design is
effective for suppressing the sneak paths problem. Suitable circuit models are
needed to simulate semiconductor structures.

A general circuit model for memristor-based
one diode-one resistor structures is proposed in this work. The Simulation
Program with Integrated Circuit Emphasis (SPICE) environment was used to
simulate the designed circuit. Well-known mathematical models such as those of
Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the
memristor component of the circuit. The current-voltage characteristics were
obtained for different mathematical models. All results were compatible with
the expected characteristics.  The best
fit characteristics were acquired using the Zha and Strukov models.

Keywords

Memristor, 1D1R, Resistive random access memory (RRAM), Circuit model

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