Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Year 2019, Volume: 15 Issue: 2, 139 - 143, 30.06.2019

Berk Morkoc Ayşegül Kahraman , Aliekber Aktag , Ercan Yılmaz

https://doi.org/10.18466/cbayarfbe.460022

Cited By: 6

https://izlik.org/JA94RB63LH

Abstract

Electrical parameters of Erbium Oxide (Er₂O₃)
MOS capacitors depending on frequency were investigated deeply, in this paper.
Er₂O₃ layers were deposited on p–Si substrates with (100)
oriented using RF–magnetron sputtering method. The films were annealed at 500 ^oC
in N₂ environment. C–V characteristic changes reduce with increasing
frequency. G/ω–V characteristic variations show different behavior between
10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are
caused by interface states between silicon and Er₂O₃
layer, series resistance (R_s) effects and the relaxation time of
trapped states. The R_s values calculated by the C_ma and G_ma
values at the high frequency and decrease with rising frequency. Then, C_c­­–V
and G_c/ω–V characteristic curves were measured and compared to first
measurements. In addition, interface state density (D_it), diffusion
potential (V_D), and barrier height (_B) were calculated and these results demonstrate
similar behaviors.

Keywords

Er2O3 , MOS , Capacitor , Interface states , Series resistance

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