Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Abstract

Electrical parameters of Erbium Oxide (Er₂O₃) MOS capacitors depending on frequency were investigated deeply, in this paper. Er₂O₃ layers were deposited on p–Si substrates with (100) oriented using RF–magnetron sputtering method. The films were annealed at 500 ^oC in N₂ environment. C–V characteristic changes reduce with increasing frequency. G/ω–V characteristic variations show different behavior between 10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are caused by interface states between silicon and Er₂O₃ layer, series resistance (R_s) effects and the relaxation time of trapped states. The R_s values calculated by the C_ma and G_ma values at the high frequency and decrease with rising frequency. Then, C_c­­–V and G_c/ω–V characteristic curves were measured and compared to first measurements. In addition, interface state density (D_it), diffusion potential (V_D), and barrier height (_B) were calculated and these results demonstrate similar behaviors.

Keywords

• Er2O3,MOS,Capacitor,Interface states,Series resistance

References

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