Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization

Cihan Kuru

doi:10.17776/csj.603329

EN

Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization

Abstract

Recently, transition metal dichalcogenides (TMDs) have gained great attention owing to their remarkable properties. The electronic structure of TMDs can be modified by substitutional doping, which could give rise to novel and exciting properties. In this study, a strategy is presented for controlled vanadium (V) doping of MoS2, in which V doped MoS2 films with good uniformity are prepared by thermal sulfurization of V-Mo alloy films deposited using co-sputtering. The V incorporation in MoS2 induces p type doping, which enhances the electrical conductivity of MoS2 by a factor of 35-40. Such doping strategy and consequent conductivity improvement may be useful in many applications such as catalysis, nanoelectronics and optoelectronics.

Keywords

MoS2,doping,vanadium,transition metal dichalcogenides,thin film

Supporting Institution

The Scientific and Technological Research Council of Turkey

Project Number

117M257

Thanks

I would like to thank Dr. Zeliha Ertekin for her help with the four-point probe measurements.

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Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Authors

Cihan Kuru ^*
0000-0002-8565-8068
Türkiye

Publication Date

March 22, 2020

Submission Date

August 7, 2019

Acceptance Date

March 11, 2020

Published in Issue

Year 2020 Volume: 41 Number: 1

DOI

https://doi.org/10.17776/csj.603329

IZ

https://izlik.org/JA63AN43UA

APA

Kuru, C. (2020). Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization. Cumhuriyet Science Journal, 41(1), 305-310. https://doi.org/10.17776/csj.603329

AMA

1.Kuru C. Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization. CSJ. 2020;41(1):305-310. doi:10.17776/csj.603329

Chicago

Kuru, Cihan. 2020. “Controlled Vanadium Doping of Mos2 Thin Films through Co-Sputtering and Thermal Sulfurization”. Cumhuriyet Science Journal 41 (1): 305-10. https://doi.org/10.17776/csj.603329.

EndNote

Kuru C (March 1, 2020) Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization. Cumhuriyet Science Journal 41 1 305–310.

IEEE

[1]C. Kuru, “Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization”, CSJ, vol. 41, no. 1, pp. 305–310, Mar. 2020, doi: 10.17776/csj.603329.

ISNAD

Kuru, Cihan. “Controlled Vanadium Doping of Mos2 Thin Films through Co-Sputtering and Thermal Sulfurization”. Cumhuriyet Science Journal 41/1 (March 1, 2020): 305-310. https://doi.org/10.17776/csj.603329.

JAMA

1.Kuru C. Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization. CSJ. 2020;41:305–310.

MLA

Kuru, Cihan. “Controlled Vanadium Doping of Mos2 Thin Films through Co-Sputtering and Thermal Sulfurization”. Cumhuriyet Science Journal, vol. 41, no. 1, Mar. 2020, pp. 305-10, doi:10.17776/csj.603329.

Vancouver

1.Cihan Kuru. Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization. CSJ. 2020 Mar. 1;41(1):305-10. doi:10.17776/csj.603329

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Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization

Abstract

Project Number

Controlled vanadium doping of mos2 thin films through co-sputtering and thermal sulfurization

Abstract

Keywords

Supporting Institution

Project Number

Thanks

References

Details

Primary Language

Subjects

Journal Section

Authors

Publication Date

Submission Date

Acceptance Date

Published in Issue

DOI

IZ

Cite

Cited By

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Enhancement in the sensitivity and selectivity of Cu functionalized MoS2 nanoworm thin films for nitrogen dioxide gas sensor

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