GROWTH OF InSe and InSe:Zn SEMICONDUCTORS BY BRIDGMAN/STOCKBARGER TECHNIQUE and STRUCTURAL CHARACTERIZATIONS

Abstract

Rapid increase in the world population day by day due to the decrease in oil reserves and climate change, identification of environmentally friendly sources of energy is emerging as one of the priority issues.  The importance of semiconductors paving the way for nano and optoelectronic technology has recently been increasing. But, producing them easily and having their vast application fields are most important. For that reason, the crystals having wide application field and their characteristics which are determinated are needed. The characteristics of these crystals which are important fort the nano and optoelecronic technology will be explored in detail by analyzing the all obtained results. InSe and InSe:Zn binary semiconductor compounds were grown in our crystal growth laboratory by the Bridgman-Stockbarger method. The structural and morphological characterizations of the samples were carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy (EDX) techniques. The XRD results indicated that the grown films had hexzagonal structure and Zn doping increased the peak intensities. The lattice parameters were calculated to be a=b= 4.002 Å, c = 17.160 Å for InSe and a=b= 5.845 Å ve c = 16.788 Å for (0012) InSe:Zn using the XRD results.From the SEM results, it was observed that the average grain size values for InSe and InSe:Zn were between 42-155 nm and 50-125 nm, respectively. EDX results showed that In and Se elements were in weight 57.04% and 38.46% in the structure.

Keywords

• InSe,InSe:Zn,Brigdman/Stockbarger Technique,XRD,SEM,EDX

InSe ve InSe:Zn YARIİLETKENLERİN BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ ve YAPISAL KARAKTERİZASYONU

Abstract

 Dünya nüfusunun hızla artması, petrol rezervlerinin gün geçtikçe azalması ve iklim değişikliklerinden dolayı, çevre dostu enerji kaynaklarının belirlenmesi öncelikli konulardan birisi olarak ortaya çıkmaktadır. Bu maksatla, uygulama alanlarının çok olduğu ve karakteristiklerinin tam olarak belirlendiği yarıiletkenlere ihtiyaç duyulmaktadır. A^IIIB^VI yarıiletken kristallerin büyütülmesi ve araştırılmasıyla yarıiletken teknolojisinde büyük ilerlemeler sağlanmıştır. Elde edilen bütün sonuçlar analiz edilerek nano ve optoelektronik teknolojisi için önemli olan bu kristallerin karakteristikleri detaylı olarak araştırılmıştır. InSe ve InSe:Zn ikili yarıiletken bileşikleri, bölümümüz kristal büyütme laboratuvarında, Bridgman-Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve morfolojik karakterizasyonları X-ışını kırınımı (XRD), taramalı Elektron Mikroskobu (SEM) ve Enerji ayrımlı X-ışını spektroskopisi (EDX) teknikleri kullanılarak gerçekleştirilmiştir. XRD sonuçları, büyütülen numunelerin hekzagonal kristal yapıya sahip olduklarını ve Zn katkılamanın pik şiddetlerini artırdığını göstermiştir. XRD sonuçları kullanılarak, örgü  parametreleri InSe için a =b= 4.002 Å, c = 17.160 Å ve InSe:Zn (0012) için ise a=b=5.845 Å ve c=16,788 Å olarak hesaplanmıştır. SEM sonuçlarından, ortalama tanecik büyüklüğünün sırasıyla, InSe için 42-155 nm ve InSe:Zn için 50-125 nm aralığında olduğu bulunmuştur. EDX sonuçları, In ve Se elementlerinin ağırlıkça %57.04 ve %38.46 olarak yapıda yer aldığını göstermiştir. 

Keywords

• InSe,InSe:Zn,Brigdman/Stockbarger Tekniği,XRD,SEM,EDX

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