Research Article

ELEKTRON IŞIN KAYNAK YONTEMi

Number: 005 December 15, 2003
  • M. Aydın *
EN TR

ELEKTRON IŞIN KAYNAK YONTEMi

Abstract

Elektron ism kaynak yonterni ergitme ve kau hal kaynak yonternleri ile elde

edilemeyen mekanik ve mikroyapi ozelliklerin elde edilmesi icin kullarulan bir ileri

kaynak teknolojisidir. Elektron ism kaynak teknolojisinde dusuk lSI girdisi ve elde

edilen kaynak mukavemetleri dikkatleri bu kaynak yonterninin kullamrmna

yoneltrnistir. Yontemin pahah olmasi endustrideki kullarnrn alanlanm

krsitlamaktadrr, Bu yontemin daha iyi tamnlmasr, avantaj ve dezavantajlannm

bilinmesi, mevcut kullarum alanlanmn artrnasma yardimci olacaknr,

Keywords

References

  1. [1] Lim, S. c. Gupta, M., Ren, L. and Kwok, J. K. M., The Tribological Properties of Al-Cu/SiCp Metal Matrix Composites Fabricated Using the Rheocasting Technique, Journal of Materials Processing Technology, Journal of Materials Processing Technology, 89-90, 1999, 591-596.
  2. [2] Ma, Z. Y. and Tjong, S. C; In Situ Ceramic Particle Reinforced Al Matrix Composites Fabricated by Reaction Pressing in the Ti02 (Tit- Al-B (B203) Systems, Metallurgical and Materrials Transactions A, 28A, 1997,1931-1942.
  3. [3] Surappa, M. K. and Rohatgi, P. K., Preparation and Properties of Al- Ceramic Particle Composites, Journal of Materials Science, 16, 1981, 983-993.
  4. [4] Rizkalla, H. L. and Abdulwahed, A., Some Mechanical Properties of Metal-Nonmetal AI-Si02 Particulate Composites, Journal of Materials Processing Technology, 5, 1996, 398-403.
  5. [5] Aghajanian, M. K., Burke, J. T., White, D. R. and Nagelberg, A. S., A New Infiltration Process for the Fabrication of Metal Matrix Composites, 'Sample Quarterly, July 1989,43-46.
  6. [6] Sukumaran, K., Pillai, S. G. K., Pillai, R. M., Kelukutty, V. S., Pai, B. C; Satyanarayana K. G. and Ravikumar, K. K., The Effects of Mg Additions on the Structure and Properties of AI-7Si- I OSiCp Composites, Journal of Materials Science, 30,1995, 1469-1472.
  7. [7] Seo, Y. H. and Kang, C. G., The Effect of Applied Pressure on Particledispersion Characteristics and Mechanical Properties in Melt Stirring Squeeze-cast SiCp/AI composites, Journal of Materials Processing Technology, 55,1995, 370-379.
  8. [8] Kuruvilla, A. K., Prasad, K. S., Bhanuprasad, V. V. and Mahajan, Y. R., Microstructure-property Correlation in AlITiB2 (XD) Composites, Scripta Metallurgica et Materialia, 24, 1990. 873-878,

Details

Primary Language

Turkish

Subjects

Engineering

Journal Section

Research Article

Authors

M. Aydın * This is me

Publication Date

December 15, 2003

Submission Date

September 15, 2003

Acceptance Date

November 15, 2003

Published in Issue

Year 2003 Number: 005

APA
Aydın, M. (2003). ELEKTRON IŞIN KAYNAK YONTEMi. Journal of Science and Technology of Dumlupınar University, 005, 213-227. https://izlik.org/JA43JY54XY
AMA
1.Aydın M. ELEKTRON IŞIN KAYNAK YONTEMi. DPÜFBED. 2003;(005):213-227. https://izlik.org/JA43JY54XY
Chicago
Aydın, M. 2003. “ELEKTRON IŞIN KAYNAK YONTEMi”. Journal of Science and Technology of Dumlupınar University, nos. 005: 213-27. https://izlik.org/JA43JY54XY.
EndNote
Aydın M (December 1, 2003) ELEKTRON IŞIN KAYNAK YONTEMi. Journal of Science and Technology of Dumlupınar University 005 213–227.
IEEE
[1]M. Aydın, “ELEKTRON IŞIN KAYNAK YONTEMi”, DPÜFBED, no. 005, pp. 213–227, Dec. 2003, [Online]. Available: https://izlik.org/JA43JY54XY
ISNAD
Aydın, M. “ELEKTRON IŞIN KAYNAK YONTEMi”. Journal of Science and Technology of Dumlupınar University. 005 (December 1, 2003): 213-227. https://izlik.org/JA43JY54XY.
JAMA
1.Aydın M. ELEKTRON IŞIN KAYNAK YONTEMi. DPÜFBED. 2003;:213–227.
MLA
Aydın, M. “ELEKTRON IŞIN KAYNAK YONTEMi”. Journal of Science and Technology of Dumlupınar University, no. 005, Dec. 2003, pp. 213-27, https://izlik.org/JA43JY54XY.
Vancouver
1.M. Aydın. ELEKTRON IŞIN KAYNAK YONTEMi. DPÜFBED [Internet]. 2003 Dec. 1;(005):213-27. Available from: https://izlik.org/JA43JY54XY

HAZİRAN 2020'den itibaren Journal of Scientific Reports-A adı altında ingilizce olarak yayın hayatına devam edecektir.