HEAT TREATMENT EFFECT ON RADIATION STABILITY OF THE SCHOTTKY BARRIER ON THE BASE OF n-Ge
Abstract
The analyses of the method for increase of radiation stability of semiconductor devices are given in the
present state. For this purpose in n-Ge the thermal defects have preliminarily been created and their
interaction with radiation defects in the irradiation process has been investigated by photocapacity and
photoconductivity methods.
It has been found that when interacting with radiation defects in the irradiation process, preliminarily created
thermal defects in n-Ge fonn more stable defects which lead to increase of radiation stability of diodes.
The set of the obtained experimental data indicates that at heat treatment of Germanium at temperatures of T
> 500 °C the defects with intrinsic structural disturbances of the crystal lattice itself are formed. These defects
interacting with radiation defects during irradiation form more stable defects leading to increase in radiation
stability of the material. The fact that the insertion velocity of radiation defects in thermally treated samples is
less than in thermally untreated samples indicates that thermal defects are responsible for mobile radiation
defects. The results obtained from this study are agree with the handled data.
Keywords
References
- Artamanov V.V., Valakh M.Ya., Denisov A.V., Mordokovich V.N.,1992, Fiz. Tech. Poluprov , No. 12,2083-2090.
- Berman L.S., Lebedev A.V., 1981, Capacitance Spectroscopy of Deep Centers in SemiconductorsrNauka, Leningrad, 176 p.
- Jafarov T.D., 1990. Radiation-Stimulated Diffusion in Semiconductors:Atomizdat, Moscow, Matadov R.S., Gasumov G.M., Tagiev T.B., Aliev A.N., 1997, Fizika, No.2, 1-3.
- Strikha V.I., Buzanova E.V., Radzievski I.A., 1974, Semiconductor Devices With The Schottky Barrier: Sov. Radio, Moscow, 50 p.
Details
Primary Language
English
Subjects
Engineering
Journal Section
Research Article
Authors
Ayaz Aliyev
*
This is me
Rahim Madatov
This is me
İskender Askerov
This is me
A. Cem Çokrak
This is me
Publication Date
June 15, 2001
Submission Date
March 15, 2001
Acceptance Date
May 15, 2001
Published in Issue
Year 2001 Number: 002