The microelectronic parameters of Al /ZnO /pSi/Al Schottky diode for solar cell applications

Year 2015, Volume: 4 Issue: 1, 55 - 58, 01.06.2015

M Benhaliliba Ys Ocak H Mokhtari Ce Benouis Ms Aida

Abstract

Microelectronics properties of Al/ZnO/p-Si/Al Schottky diode have been investigated. ZnO films have grown onto p type silicon substrate by ultrasonic spray pyrolysis @ 350°C. Al front contacts have been deposited by thermal evaporation process in vacuum at 10-6 Torr. The current-voltage I-V characteristics show a good rectifying profile around 1900. The extracted parameters in dark and light 150 mW/cm² conditions: ideality factor n , barrier height ΦB, series resistance Rs are respectively found to be 3.5 and 1.6, 0.74 eV and 0.89 eV, 5 kΩ and 1.6 kΩ, respectively. Effect of temperature, varied within the range of 22-107 ° C, on the I-V characteristics was emphasized. Dark and illumination characteristics were also studied. Finally, we accomplished the study by the measurement of capacitance-voltage C-V characteristics as a result of frequency.

Keywords

Ultrasonic spray pyrolysis, ZnO film, I-V characteristics, Dark and illumination exposure, Rectifying profile

Al/ZnO/p-Si/Al Schottky Diyotunun Güneş Pili Uygulamaları İçin Mikroelektronik Parametreleri

Abstract

Keywords

Ultrasonik Püskürtme Proliz, ZnO film, I-V karakteristiği, Karanlık ve Aydınlık Pozlama, Doğrultma özelliği

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