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The microelectronic parameters of Al /ZnO /pSi/Al Schottky diode for solar cell applications

Year 2015, Volume: 4 Issue: 1, 55 - 58, 01.06.2015

Abstract

Microelectronics properties of Al/ZnO/p-Si/Al Schottky diode have been investigated. ZnO films have grown onto p type silicon substrate by ultrasonic spray pyrolysis @ 350°C. Al front contacts have been deposited by thermal evaporation process in vacuum at 10-6 Torr. The current-voltage I-V characteristics show a good rectifying profile around 1900. The extracted parameters in dark and light 150 mW/cm² conditions: ideality factor n , barrier height ΦB, series resistance Rs are respectively found to be 3.5 and 1.6, 0.74 eV and 0.89 eV, 5 kΩ and 1.6 kΩ, respectively. Effect of temperature, varied within the range of 22-107 ° C, on the I-V characteristics was emphasized. Dark and illumination characteristics were also studied. Finally, we accomplished the study by the measurement of capacitance-voltage C-V characteristics as a result of frequency.

References

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Al/ZnO/p-Si/Al Schottky Diyotunun Güneş Pili Uygulamaları İçin Mikroelektronik Parametreleri

Year 2015, Volume: 4 Issue: 1, 55 - 58, 01.06.2015

Abstract

References

  • M. Benhaliliba, C.E. Benouis, M.S. Aida, F. Yakuphanoglu, A. Sanchez Juarez, J. Sol-Gel Sci. Technol. (2010)doi 10.1007/s10971-010-2258-x.
  • C.E. Benouis, M. Benhaliliba, A. Sanchez Juarez, M.S. Aida, F. Chami, F. 302 Yakuphanoglu, J. Alloys Compd. 490 (2010) 62-67.
  • Y.S.Ocak, M. Kulakci, R. Turan, T. Kilicoglu, O. Gullu, Journal of Alloys and Compounds 509 (2011) 6631-6634.
  • Gwang-Hee Nam, Seong-Ho Baek, Il-Kyu Park, Journal of Alloys and Compounds 613 (2014) 37-41.
  • Y. Liu, J. Yu, P.T. Lai, International Journal of Hydrogen Energy 39 (2014) 10313-10319. [6] Y. S. Ocak, Journal of Alloys and Compounds 513 (2012) 130-134.
  • M. Benhaliliba, C.E. Benouis, A. Tiburcio-Silver, Y.S. Ocak , EPJ Web of Conferences 44 03003 (2013) DOI: 10.1051/ epjconf/2013 44 03003.
  • M. Benhaliliba, C.E. Benouis, Z. Mouffak, Y.S. Ocak, A. Tiburcio-Silver, M.S. Aida, A.A. Garcia, A. Tavira, A. Sanchez Juarez, Superlattices and Microstructures 63 (2013) 228-239.
  • J. Herrán, I. Fernández, R. Tena-Zaera, E. Ochoteco, G. Cabanero, H. Grande, Sensors and Actuators B 174 (2012) 274-278.
  • U. Ozgur, Y.I. Alivov, C. Liu, et al., J. Appl. Phys. 98 (2005) 041301.
  • Sze, S.M., Kwok k. Ng 2007, Physics of Semiconductor Devices, Wiley, New York.
  • S. Karatas, F. Yakuphanoglu, Materials Chemistry and Physics 138 (2013) 72-77.
  • S.J. Young, S.J. Chang, L.W. Ji, T.H. Meen, C.H. Hsiao, K.W. Liu, K.J. Chen, Z.S. Hu, Microelectronic Engineering 88 (2011) 113-116.
  • Xin’an Zhang, Fusheng Hai, Ting Zhang, Caihong Jia, Xianwen Sun, Linghong Ding, Weifeng Zhang, Microelectronic Engineering 93 (2012) 5-9.
There are 13 citations in total.

Details

Primary Language Turkish
Journal Section Research Article
Authors

M Benhaliliba This is me

Ys Ocak This is me

H Mokhtari This is me

Ce Benouis This is me

Ms Aida This is me

Publication Date June 1, 2015
Published in Issue Year 2015 Volume: 4 Issue: 1

Cite

IEEE M. Benhaliliba, Y. Ocak, H. Mokhtari, C. Benouis, and M. Aida, “Al/ZnO/p-Si/Al Schottky Diyotunun Güneş Pili Uygulamaları İçin Mikroelektronik Parametreleri”, DUFED, vol. 4, no. 1, pp. 55–58, 2015, doi: 10.1007/s10971-010-2258-x.


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